Datasheet > 1N4383GP/4H

1N4383GP/4H

更新时间： 2023-03-15 00:00:00

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	327K
描述
Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN

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1N4383GP/4H 数据手册

1N4383GP thru 1N4385GP

1N4585GP & 1N4586GP

Vishay General Semiconductor

Electrical Characteristics

(T_A= 25 °C unless otherwise noted)

Parameter

Maximum

Test condition

at 1.0 A

Symbol 1N4383GP 1N4384GP 1N4385GP 1N4585GP 1N4586GP Unit

V_F

1.0

instantaneous

forward voltage

Maximum DC reverse

current at rated DC

blocking voltage

_A= 25 °C

I_R

5.0

250

µA

T_A= 150 °C

* Typical reverse

recovery time

at I_F= 0.5 A, I_R= 1.0 A,

t_rr

2.0

µs

I_rr= 0.25 A

Typical junction

capacitance

at 4.0 V, 1 MHz

C_J

Thermal Characteristics

(T_A= 25 °C unless otherwise noted)

Parameter

Typical thermal resistance⁽¹⁾

Notes:

Symbol 1N4383GP 1N4384GP 1N4385GP 1N4585GP 1N4586GP Unit

R_θJA45 °C/W

(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted

*JEDEC registered values

Ratings and Characteristics Curves

(T_A= 25 °C unless otherwise noted)

1.0

0.8

0.6

0.4

0.2

60 Hz

Resistive or

Inductive Load

TA = 100 °C

8.3 ms Single Half Sine-Wave

0.375" (9.5mm)

Lead Length

100

125

150

175

200

100

Number of Cycles at 60 Hz

Ambient Temperature, °C

Figure 1. Forward Current Derating Curve

Figure 2. Maximum Non-repetitive Peak Forward Surge Current

www.vishay.com

Document Number 88507

14-Oct-05

123 4

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