5秒后页面跳转
1N4007G-B PDF预览

1N4007G-B

更新时间: 2024-01-30 16:47:32
品牌 Logo 应用领域
固锝 - GOOD-ARK 整流二极管
页数 文件大小 规格书
2页 87K
描述
1.0A GLASS PASSIVATED RECTIFIER

1N4007G-B 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.58
二极管类型:RECTIFIER DIODEJESD-609代码:e3
峰值回流温度(摄氏度):NOT SPECIFIED端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
处于峰值回流温度下的最长时间:NOT SPECIFIED

1N4007G-B 数据手册

 浏览型号1N4007G-B的Datasheet PDF文件第1页 
Glass Passivated Standard Rectifier  
Rating and Characteristic Curves 1N4001G THRU 1N4007G  
FIG.2 - MAXIMUM NON-REPETITIVE  
PEAK FORWARD SURGE CURRENT  
FIG.1 - FORWARD CURRENT DERATING CURVE  
1.0  
30  
25  
20  
15  
10  
5
Pulse Width 8.3ms  
Single Half-Sire-Wave  
(JEDEC Method)  
0.8  
0.6  
0.4  
0.2  
60 Hz Resistive or  
Inductive load  
0
0
0
50  
100  
150  
1
10  
100  
LEAD TEMPERATURE, oC  
NUMBER OF CYCLES AT 60Hz  
FIG.3 - TYPICAL INSTANTANEOUS  
FORWARD CHARACTERISTICS  
FIG.4 - TYPICAL REVERSE CHARACTERISTICS  
10  
1.0  
100  
TJ=125oC  
10  
1
0.1  
0.1  
TJ=25oC  
TJ=25oC  
PULSE WIDTH=300uS  
1% DUTY CYCLE  
0.01  
0.01  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
0
20  
40  
60  
80  
100  
INSTANTANEOUS FORWARD VOLTAGE,  
VOLTS  
PERCENT OF RATED PEAK REVERSE VOLTAGE,%  
FIG.5 - TYPICAL JUNCTION CAPACITANCE  
100  
10  
1
TJ = 25oC  
f = 1.0 MHZ  
Vsig = 50mVp-p  
0.1  
1.0  
4.0 10  
100  
REVERSE VOLTAGE, VOLTS  
-G” suffix designates RoHS compliant Version  

与1N4007G-B相关器件

型号 品牌 描述 获取价格 数据表
1N4007GH02-1 RECTRON Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41

获取价格

1N4007GH03 RECTRON Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41

获取价格

1N4007GH09 RECTRON Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41

获取价格

1N4007G-K TSC 1A, 50V - 1000V Standard Rectifier

获取价格

1N4007GL GOOD-ARK 1.0A GLASS PASSIVATED RECTIFIER

获取价格

1N4007GL DIODES 1.0A GLASS PASSIVATED RECTIFIER

获取价格