1N4007G

更新时间： 2024-02-26 10:25:32

品牌	Logo	应用领域
恩智浦 - NXP		二极管 PC
页数	文件大小	规格书
5页	42K
描述
Rectifiers(Rugged glass package, using a high temperature alloyed construction)

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技术参数
数据手册

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1N4007G 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.58
二极管类型：	RECTIFIER DIODE	JESD-609代码：	e3
峰值回流温度（摄氏度）：	NOT SPECIFIED	端子面层：	Matte Tin (Sn) - with Nickel (Ni) barrier
处于峰值回流温度下的最长时间：	NOT SPECIFIED

1N4007G 数据手册

Philips Semiconductors

Product speciﬁcation

Rectiﬁers

1N4001G to 1N4007G

This package is hermetically sealed

and fatigue free as coefficients of

expansion of all used parts are

matched.

FEATURES

DESCRIPTION

• Glass passivated

Rugged glass package, using a high

temperature alloyed construction.

• High maximum operating

temperature

• Low leakage current

• Excellent stability

2/3 page (Datasheet)

• Available in ammo-pack.

MAM047

Fig.1 Simplified outline (SOD57) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_RRM

repetitive peak reverse voltage

1N4001G

−

100

200

400

600

800

1N4002G

1N4003G

1N4004G

1N4005G

1N4006G

1N4007G

1000

V_R

continuous reverse voltage

1N4001G

−

100

1N4002G

1N4003G

200

1N4004G

400

1N4005G

600

1N4006G

800

1N4007G

1000

I_F(AV)

1.00 A

0.75 A

1.00 A

average forward current

averaged over any 20 ms

period; T_amb= 75 °C; see Fig.2

−

averaged over any 20 ms

period; T_amb= 100 °C; see Fig.2

I_F

continuous forward current

repetitive peak forward current

non-repetitive peak forward current

storage temperature

−

T_amb= 75 °C; see Fig.2

I_FRM

I_FSM

T_stg

T_j

half sinewave; 60 Hz

−

+175

−65

°C

junction temperature

1996 May 24

123 4 5

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