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1N4006/90 PDF预览

1N4006/90

更新时间: 2023-02-26 15:44:25
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 331K
描述
Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

1N4006/90 数据手册

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1N4001 thru 1N4007  
Vishay General Semiconductor  
Electrical Characteristics  
(TA = 25 °C unless otherwise noted)  
Parameter  
Test condition Symbol 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 Unit  
Maximum instantaneous  
forward voltage  
at 1.0 A  
VF  
1.1  
V
Maximum DC reverse current at TA = 25 °C  
IR  
5.0  
50  
µA  
rated DC blocking voltage  
TA = 125 °C  
Typical junction capacitance  
at 4.0 V, 1 MHz  
CJ  
15  
pF  
Thermal Characteristics  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbol 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 Unit  
Typical thermal resistance(1)  
RθJA  
RθJL  
50  
25  
°C/W  
Notes:  
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted  
Ratings and Characteristics Curves  
(TA = 25 °C unless otherwise noted)  
30  
25  
20  
15  
10  
5.0  
1.0  
0.8  
0.6  
0.4  
0.2  
0
60 Hz Resistive or  
Inductive Load  
TA = 75 °C  
8.3 ms Single Half Sine-Wave  
0.2 x 0.2” (5.0 x 5.0 mm)  
Copper Pads  
0.375” (9.5 mm)  
Lead Length  
0
25  
50  
75  
100  
125  
150  
175  
1
10  
100  
Junction Temperature (°C)  
Number of Cycles at 60 Hz  
Figure 1. Forward Current Derating Curve  
Figure 2. Maximum Non-repetitive Peak Forward Surge Current  
www.vishay.com  
2
Document Number 88503  
25-Aug-05  

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