Datasheet > 1N4006E

1N4006E

更新时间： 2024-01-05 04:16:24

品牌	Logo	应用领域
海湾 - GULFSEMI		二极管
页数	文件大小	规格书
2页	82K
描述
GENERAL PURPOSE PLASTIC RECTIFIER VOLTAGE:50 TO 1000V CURRENT: 1.0A

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技术参数
数据手册

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1N4006E 技术参数

生命周期：	Obsolete	零件包装代码：	DO-41
包装说明：	DO-41SP, 2 PIN	针数：	2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.08
Is Samacsys：	N	外壳连接：	ISOLATED
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE	JEDEC-95代码：	DO-41
JESD-30 代码：	O-PALF-W2	JESD-609代码：	e0
元件数量：	1	端子数量：	2
最大输出电流：	1 A	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	LONG FORM
认证状态：	Not Qualified	最大重复峰值反向电压：	800 V
表面贴装：	NO	端子面层：	TIN LEAD
端子形式：	WIRE	端子位置：	AXIAL
Base Number Matches：	1

1N4006E 数据手册

1N4001E THRU 1N4007E

GENERAL PURPOSE

PLASTIC RECTIFIER

VOLTAGE:50 TO 1000V

CURRENT: 1.0A

A-405

FEATURE

Molded case feature for auto insertion

High current capability

Low leakage current

High surge capability

High temperature soldering guaranteed

250°C/10sec/0.375”lead length at 5 lbs tension

MECHANICAL DATA

Terminal:Plated axial leads solderable per

MIL-STD 202E, method 208C

Case:Molded with UL-94 Class V-0 recognized Flame

Retardant Epoxy

Polarity:color band denotes cathode

Mounting position:any

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(single-phase, half -wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated,

for capacitive load, derate current by 20%)

1N4

SYMBOL

units

001E 002E 003E 004E 005E 006E 007E

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Vrrm

Vrms

Vdc

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Maximum DC blocking Voltage

100

1000

Maximum Average Forward Rectified

Current 3/8”lead length at Ta =75°C

Peak Forward Surge Current 8.3ms single

Half sine-wave superimposed on rated load

Maximum Instantaneous Forward Voltage at

rated forward current

If(av)

Ifsm

1.0

30.0

1.1

Maximum full load reverse current

full cycle at T_L=75°C

Ir(av)

30.0

µA

5.0

50.0

µA

Maximum DC Reverse Current

at rated DC blocking voltage

Ta =25°C

Ta =100°C

Typical Junction Capacitance

Typical Thermal Resistance

(Note 1)

15.0

°C/W

°C

(Note 2)

R(ja)

Tstg

50.0

Storage and Operation Junction Temperature

-50 to +150

Note:

1. Measured at 1.0 MHz and applied voltage of 4.0Vdc

2. Thermal Resistance from Junction to Ambient at 0.375”lead length, P.C. Board Mounted

Rev.A6

www.gulfsemi.com

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