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1N4003E/90 PDF预览

1N4003E/90

更新时间: 2023-03-15 00:00:00
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
2页 22K
描述
Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

1N4003E/90 数据手册

 浏览型号1N4003E/90的Datasheet PDF文件第1页 
1N4001 thru 1N4007  
Vishay Semiconductors  
formerly General Semiconductor  
Ratings and  
Characteristic Curves (TA = 25°C unless otherwise noted)  
Fig. 2 – Maximum Non-Repetitive  
Peak Forward Surge Current  
Fig. 1 – Forward Current Derating Curve  
30  
25  
20  
15  
10  
5.0  
1.0  
TA = 75°C  
8.3ms Single Half Sine-Wave  
(JEDEC Method)  
60HZ Resistive or  
Inductive Load  
0.8  
0.2 x 0.2" (5.0 x 5.0mm)  
Copper Pads  
0.6  
0.4  
0.2  
0.375" (9.5mm)  
Lead Length  
0
1
10  
100  
0
25  
50  
75  
100  
125  
150  
175  
Ambient Temperature (°C)  
Number of Cycles at 60H  
Z
Fig. 3 – Typical Instantaneous  
Forward Characteristics  
Fig. 4 Typical Reverse Characteristics  
1,000  
100  
10  
20  
10  
TJ = 150°C  
TJ = 25°C  
Pulse Width = 300µs  
1% Duty Cycle  
1
TJ = 100°C  
TJ = 25°C  
1
0.1  
0.1  
0.01  
0.01  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
0
20  
40  
60  
80  
100  
Percentage of Peak Reverse Voltage (%)  
Instantaneous Forward Voltage (V)  
Fig. 6 – Typical Transient Thermal  
Impedance  
Fig. 5 – Typical Junction Capacitance  
100  
100  
10  
1
TJ = 25°C  
f = 1.0MHZ  
Vsig = 50mVp-p  
10  
1
0.1  
0.1  
0.01  
1
10  
100  
0.1  
1
10  
100  
Reverse Voltage (V)  
t -- Pulse Duration (sec)  
www.vishay.com  
2
Document Number 88503  
13-Jan-03  

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