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1N4003-E3/54 PDF预览

1N4003-E3/54

更新时间: 2024-11-20 14:39:07
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
5页 87K
描述
Diode 200V 1A 2-Pin DO-204AL T/R

1N4003-E3/54 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:DO-41包装说明:O-PALF-W2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:0.47Is Samacsys:N
其他特性:FREE WHEELING DIODE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.1 V
JEDEC-95代码:DO-204ALJESD-30 代码:O-PALF-W2
JESD-609代码:e3最大非重复峰值正向电流:30 A
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-50 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT APPLICABLE认证状态:Not Qualified
最大重复峰值反向电压:200 V子类别:Rectifier Diodes
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT APPLICABLEBase Number Matches:1

1N4003-E3/54 数据手册

 浏览型号1N4003-E3/54的Datasheet PDF文件第2页浏览型号1N4003-E3/54的Datasheet PDF文件第3页浏览型号1N4003-E3/54的Datasheet PDF文件第4页浏览型号1N4003-E3/54的Datasheet PDF文件第5页 
1N4001 thru 1N4007  
Vishay General Semiconductor  
General Purpose Plastic Rectifier  
FEATURES  
• Low forward voltage drop  
• Low leakage current  
• High forward surge capability  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
DO-204AL (DO-41)  
TYPICAL APPLICATIONS  
For use in general purpose rectification of power supplies,  
inverters, converters and freewheeling diodes application.  
PRIMARY CHARACTERISTICS  
Note  
IF(AV)  
1.0 A  
These devices are not AEC-Q101 qualified.  
VRRM  
50 V to 1000 V  
30 A  
I
FSM (8.3 ms sine-wave)  
MECHANICAL DATA  
Case: DO-204AL, molded epoxy body  
I
FSM (square wave tp = 1 ms)  
45 A  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS compliant, commercial grade  
VF  
IR  
1.1 V  
5.0 μA  
150 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
TJ max.  
E3 suffix meets JESD 201 class 1A whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
Maximum DC blocking voltage  
100  
1000  
Maximum average forward rectified current  
0.375" (9.5 mm) lead length at TA = 75 °C  
IF(AV)  
IFSM  
1.0  
30  
A
A
Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load  
tp = 1 ms  
45  
35  
30  
Non-repetitive peak forward  
surge current square waveform  
TA = 25 °C (fig. 3)  
tp = 2 ms  
tp = 5 ms  
IFSM  
A
Maximum full load reverse current, full cycle  
average 0.375" (9.5 mm) lead length TL = 75 °C  
IR(AV)  
I2t (1)  
30  
3.7  
μA  
A2s  
°C  
Rating for fusing (t < 8.3 ms)  
Operating junction and  
storage temperature range  
TJ, TSTG  
- 50 to + 150  
Note  
(1)  
For device using on bridge rectifier appliaction  
Document Number: 88503  
Revision: 23-Feb-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1

1N4003-E3/54 替代型号

型号 品牌 替代类型 描述 数据表
1N4003/54 VISHAY

类似代替

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4003-E3/73 VISHAY

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