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1N4002G PDF预览

1N4002G

更新时间: 2024-01-01 18:40:48
品牌 Logo 应用领域
SYNSEMI /
页数 文件大小 规格书
2页 24K
描述
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS

1N4002G 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DO-41包装说明:O-XALF-W2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.1外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-41
JESD-30 代码:O-XALF-W2元件数量:1
端子数量:2最大输出电流:1 A
封装主体材料:UNSPECIFIED封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:100 V
表面贴装:NO端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N4002G 数据手册

 浏览型号1N4002G的Datasheet PDF文件第2页 
GLASS PASSIVATED JUNCTION  
SILICON RECTIFIERS  
1N4001G - 1N4007G  
BY133G  
DO - 41  
PRV : 50 - 1000 Volts  
Io : 1.0 Ampere  
FEATURES :  
1.00 (25.4)  
0.107 (2.7)  
MIN.  
* Glass passivated chip  
* High current capability  
* High reliability  
* Low reverse current  
* Low forward voltage drop  
0.080 (2.0)  
0.205 (5.2)  
0.166 (4.2)  
1.00 (25.4)  
MECHANICAL DATA :  
0.034 (0.86)  
MIN.  
* Case : DO-41 Molded plastic  
* Epoxy : UL94V-O rate flame retardant  
* Lead : Axial lead solderable per MIL-STD-202,  
Method 208 guaranteed  
0.028 (0.71)  
* Polarity : Color band denotes cathode end  
* Mounting position : Any  
Dimensions in inches and ( millimeters )  
* Weight : 0.34 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 C ambient temperature unless otherwise specified.  
°
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
1N  
1N  
1N  
1N  
1N  
1N  
1N  
BY  
RATING  
SYMBOL  
UNIT  
4001G 4002G 4003G 4004G 4005G 4006G 4007G 133G  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
1300  
910  
V
V
V
Maximum DC Blocking Voltage  
100  
1000  
1300  
Maximum Average Forward Current  
0.375"(9.5mm) Lead Length Ta = 75 °C  
Peak Forward Surge Current  
IF(AV)  
1.0  
30  
A
IFSM  
A
8.3ms Single half sine wave Superimposed  
on rated load (JEDEC Method)  
Maximum Forward Voltage at IF = 1.0 Amp.  
VF  
IR  
1.0  
5.0  
50  
8
V
mA  
Maximum DC Reverse Current Ta = 25 °C  
IR(H)  
CJ  
at rated DC Blocking Voltage  
Ta = 100 °C  
mA  
Typical Junction Capacitance (Note1)  
Typical Thermal Resistance (Note2)  
Junction Temperature Range  
pF  
45  
°C/W  
°C  
RqJA  
TJ  
- 65 to + 175  
- 65 to + 175  
Storage Temperature Range  
TSTG  
°C  
Notes : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC  
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.  
Page 1 of 2  
Rev. 01 : January 10, 2004  

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