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1N4002G-B PDF预览

1N4002G-B

更新时间: 2024-11-23 20:12:43
品牌 Logo 应用领域
RECTRON 二极管
页数 文件大小 规格书
2页 31K
描述
Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2

1N4002G-B 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-41
包装说明:PLASTIC PACKAGE-2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.21
其他特性:HIGH RELIABILITY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-41
JESD-30 代码:O-PALF-W2JESD-609代码:e3
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):265认证状态:Not Qualified
最大重复峰值反向电压:100 V表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N4002G-B 数据手册

 浏览型号1N4002G-B的Datasheet PDF文件第2页 
1N4001G  
THRU  
RECTRON  
SEMICONDUCTOR  
TECHNICAL SPECIFICATION  
1N4007G  
GLASS PASSIVATED  
JUNCTION PLASTIC RECTIFIER  
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere  
FEATURES  
* High reliability  
* Low cost  
* Low leakage  
* Low forward voltage drop  
* High current capability  
* Glass passivated junction  
DO-41  
MECHANICAL DATA  
* Case: Molded plastic  
* Epoxy: Device has UL flammability classification 94V-O  
* Lead: MIL-STD-202E method 208C guaranteed  
* Mounting position: Any  
.034 (0.9)  
.028 (0.7)  
DIA.  
1.0 (25.4)  
MIN.  
* Weight: 0.33 gram  
.205 (5.2)  
.166 (4.2)  
.107 (2.7)  
.080 (2.0)  
DIA.  
1.0 (25.4)  
MIN.  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS (At T  
A
= 25oC unless otherwise noted)  
RATINGS  
SYMBOL  
1N4001G 1N4002G 1N4003G 1N4004G 1N4005G 1N4006G 1N4007G UNITS  
V
V
RRM  
RMS  
Volts  
Volts  
Volts  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
Maximum DC Blocking Voltage  
V
DC  
100  
1000  
Maximum Average Forward Rectified Current  
I
O
1.0  
30  
Amps  
Amps  
at TA  
= 75oC  
Peak Forward Surge Current 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
I
FSM  
Typical Junction Capacitance (Note)  
Typical Thermal Resistance  
C
J
15  
50  
pF  
0C/W  
0C/W  
0 C  
RθJA  
RθJC  
Typical Thermal Resistance  
15  
T
J
, TSTG  
-55 to + 150  
Operating and Storage Temperature Range  
ELECTRICAL CHARACTERISTICS (At TA  
= 25oC unless otherwise noted)  
SYMBOL  
1N4001G 1N4002G 1N4003G 1N4004G 1N4005G 1N4006G 1N4007G UNITS  
CHARACTERISTICS  
1.1  
5.0  
50  
Volts  
V
F
Maximum Instantaneous Forward Voltage at 1.0A DC  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
@T  
@T  
A
A
= 25oC  
= 100oC  
uAmps  
IR  
Maximum Full Load Reverse Current Average, Full Cycle  
.375” (9.5mm) lead length at T  
= 75oC  
NOTES : 1.Measured at 1 MH and applied reverse voltage of 4.0 volts  
2. “Fully ROHS compliant”, “100% Sn plating (Pb-free)”.  
30  
uAmps  
L
Z
2005-1  
REV:A  

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