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1C5818BG-R PDF预览

1C5818BG-R

更新时间: 2024-01-03 18:50:12
品牌 Logo 应用领域
SENSITRON 瞄准线二极管
页数 文件大小 规格书
3页 346K
描述
30V, SILICON, SIGNAL DIODE, DIE-1

1C5818BG-R 技术参数

生命周期:Active包装说明:R-XUUC-N1
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.40风险等级:5.68
其他特性:FREE WHEELING DIODE, LOW POWER LOSS配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-XUUC-N1元件数量:1
端子数量:1最高工作温度:125 °C
最低工作温度:-55 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:UNCASED CHIP
最大重复峰值反向电压:30 V表面贴装:YES
技术:SCHOTTKY端子形式:NO LEAD
端子位置:UPPERBase Number Matches:1

1C5818BG-R 数据手册

 浏览型号1C5818BG-R的Datasheet PDF文件第2页浏览型号1C5818BG-R的Datasheet PDF文件第3页 
1C5817  
1C5818  
1C5819  
SENSITRON  
SEMICONDUCTOR  
TECHNICAL DATA  
DATA SHEET 676, REV. D  
SILICON SCHOTTKY RECTIFIER DIE  
Very Low Forward Voltage Drop  
Applications:  
Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode  
Features:  
Soft Reverse Recovery at Low and High Temperature  
Very Low Forward Voltage Drop  
Low Power Loss, High Efficiency  
High Surge Capacity  
Guard Ring for Enhanced Durability and Long Term Reliability  
Guaranteed Reverse Avalanche Characteristics  
Electrically / Mechanically Stable during and after Packaging  
Maximum Ratings:  
Characteristics  
Peak Inverse Voltage  
1C5817  
1C5818  
1C5819  
Symbol  
VRWM  
Condition  
Max.  
Units  
V
-
20  
30  
40  
1
Max. Average Forward Current  
IF(AV)  
IFSM  
EAS  
IAR  
50% duty cycle, rectangular  
wave form  
A
A
Max. Peak One Cycle Non-  
Repetitive Surge Current  
Non-Repetitive Avalanche Energy  
8.3 ms, Sine pulse (1)  
25  
2.6  
mJ  
A
TJ = 25 C, IAS = 0.18 A,  
L = 160 mH  
IAS decay linearly to 0 in 1 s  
Repetitive Avalanche Current  
0.18  
limited by TJ max VA=1.5VR  
Max. Junction Temperature  
Max. Storage Temperature  
TJ  
Tstg  
-
-
-55 to +125  
-55 to +150  
C  
C  
Electrical Characteristics:  
Characteristics  
Max. Forward Voltage Drop  
1C5817  
Symbol  
Condition  
@ 1A, Pulse, TJ = 25 C  
Max.  
0.60  
Units  
V
VF1  
VF2  
IR1  
1C5818  
1C5819  
0.36  
0.1  
V
@ 0.1A, Pulse, TJ = 25 C  
1C5817  
1C5818  
1C5819  
Max. Reverse Current  
1C5817  
mA  
mA  
pF  
TJ = 25 C  
@VR = 20V, Pulse,  
@VR = 30V, Pulse,  
@VR = 40V, Pulse,  
TJ = 100 C  
1C5818  
1C5819  
IR2  
5.0  
1C5817  
1C5818  
1C5819  
@VR = 20V, Pulse,  
@VR = 30V, Pulse,  
@VR = 40V, Pulse,  
@VR = 5V, TC = 25 C  
fSIG = 1MHz,  
Max. Junction Capacitance  
1C5817  
CT  
110  
90  
1C5818  
VSIG = 50mV (p-p)  
1C5819  
70  
(1) in SHD package  
©2012 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681  
(631) 586-7600 FAX (631) 242-9798 www.sensitron.com sales@sensitron.com  

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