Datasheet > 1C5818GB

1C5818GB

更新时间： 2023-07-15 00:00:00

品牌	Logo	应用领域
SENSITRON		/
页数	文件大小	规格书
3页	346K
描述
30V, SILICON, SIGNAL DIODE, DIE-1

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数据手册

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1C5818GB 数据手册

1C5817

1C5818

1C5819

SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

DATA SHEET 676, REV. D

SILICON SCHOTTKY RECTIFIER DIE

Very Low Forward Voltage Drop

Applications:

 Switching Power Supply  Converters  Free-Wheeling Diodes  Polarity Protection Diode

Features:



Soft Reverse Recovery at Low and High Temperature

Very Low Forward Voltage Drop



Low Power Loss, High Efficiency

High Surge Capacity

Guard Ring for Enhanced Durability and Long Term Reliability

Guaranteed Reverse Avalanche Characteristics

Electrically / Mechanically Stable during and after Packaging

Maximum Ratings:

Characteristics

Peak Inverse Voltage

1C5817

1C5818

1C5819

Symbol

V_RWM

Condition

Max.

Units

Max. Average Forward Current

I_F(AV)

I_FSM

E_AS

I_AR

50% duty cycle, rectangular

wave form

Max. Peak One Cycle Non-

Repetitive Surge Current

Non-Repetitive Avalanche Energy

8.3 ms, Sine pulse ⁽¹⁾

2.6

T_J= 25 C, I_AS= 0.18 A,

L = 160 mH

I_ASdecay linearly to 0 in 1 s

Repetitive Avalanche Current

0.18

 limited by T_Jmax V_A=1.5V_R

Max. Junction Temperature

Max. Storage Temperature

T_J

T_stg

-55 to +125

-55 to +150

C

Electrical Characteristics:

Characteristics

Max. Forward Voltage Drop

1C5817

Symbol

Condition

@ 1A, Pulse, T_J= 25 C

Max.

0.60

Units

V_F1

V_F2

I_R1

1C5818

1C5819

0.36

0.1

@ 0.1A, Pulse, T_J= 25 C

1C5817

1C5818

1C5819

Max. Reverse Current

1C5817

T_J= 25 C

@V_R= 20V, Pulse,

@V_R= 30V, Pulse,

@V_R= 40V, Pulse,

T_J= 100 C

1C5818

1C5819

I_R2

5.0

1C5817

1C5818

1C5819

@V_R= 20V, Pulse,

@V_R= 30V, Pulse,

@V_R= 40V, Pulse,

@V_R= 5V, T_C= 25 C

f_SIG= 1MHz,

Max. Junction Capacitance

1C5817

C_T

110

1C5818

V_SIG= 50mV (p-p)

1C5819

(1) in SHD package

(631) 586-7600 FAX (631) 242-9798  www.sensitron.com  sales@sensitron.com

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