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1N5822 PDF预览

1N5822

更新时间: 2024-01-14 22:34:40
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
2页 47K
描述
SCHOTTKY BARRIER RECTIFIER

1N5822 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Active包装说明:HERMETIC SEALED, D5B, 2 PIN
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:1.63Is Samacsys:N
其他特性:METALLURGICALLY BONDED应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.4 VJESD-30 代码:O-LELF-R2
JESD-609代码:e0元件数量:1
相数:1端子数量:2
最高工作温度:125 °C最大输出电流:3 A
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:40 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Tin/Lead (Sn/Pb)
端子形式:WRAP AROUND端子位置:END
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1N5822 数据手册

 浏览型号1N5822的Datasheet PDF文件第1页 
RATINGS AND CHARACTERISTIC CURVES 1N5820 THRU 1N5822  
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK FORWARD  
SURGE CURRENT  
FIG. 1 - FORWARD CURRENT DERATING CURVE  
80  
70  
4
3
2
1
0
T =T max.  
8.3ms SINGLE HALF SINE-WAVE  
(JEDEC Method)  
J
J
RESISTIVE OR  
INDUCTIVE LOAD  
0.375" (9.5mm) LEAD LENGTH  
60  
50  
40  
30  
20  
10  
0
20  
40  
60  
80  
100  
120  
140  
LEAD TEMPERATURE, °C  
1
10  
100  
NUMBER OF CYCLES AT 60 HZ  
FIG. 3 - TYPICAL INSTANTANEOUS  
FORWARD CHARACTERISTICS  
FIG. 4 - TYPICAL REVERSE  
CHARACTERISTICS  
50  
10  
10  
PULSE WIDTH=300µs  
1% DUTY CYCLE  
T =125°C  
J
T
= 125°C  
J
1
1
T =75°C  
J
T =25°C  
J
0.1  
0.1  
T =25°C  
J
0.01  
0.01  
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6  
0.001  
0
20  
40  
60  
80  
100  
INSTANTANEOUS FORWARD VOLTAGE,  
VOLTS  
PERCENT OF RATED PEAK REVERSE  
VOLTAGE, %  
FIG. 5 - TYPICAL JUNCTION CAPACITANCE  
FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE  
1,000  
100  
10  
100  
T =25°C  
J
f=1.0 MHz  
Vsig=50mVp-p  
10  
1
0.1  
0.1  
1
10  
100  
0
0.1  
1
10  
100  
REVERSE VOLTAGE, VOLTS  
t, PULSE DURATION, sec.  

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