5秒后页面跳转
1N5819 PDF预览

1N5819

更新时间: 2024-02-19 17:58:40
品牌 Logo 应用领域
RECTRON 二极管
页数 文件大小 规格书
2页 27K
描述
SCHOTTKY BARRIER RECTIFIER

1N5819 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.56
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-G2
元件数量:1端子数量:2
最高工作温度:125 °C最低工作温度:-65 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:0.45 W
最大重复峰值反向电压:40 V表面贴装:YES
技术:SCHOTTKY端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N5819 数据手册

 浏览型号1N5819的Datasheet PDF文件第2页 
1N5817  
THRU  
RECTRON  
SEMICONDUCTOR  
TECHNICAL SPECIFICATION  
1N5819  
SCHOTTKY BARRIER RECTIFIER  
VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere  
FEATURES  
* Low switching noise  
* Low forward voltage drop  
* High current capability  
* High switching capabitity  
* High reliability  
DO-41  
* High surge capability  
MECHANICAL DATA  
* Case: Molded plastic  
* Epoxy: Device has UL flammability classification 94V-O  
* Lead: MIL-STD-202E method 208C guaranteed  
* Mounting position: Any  
.034 (0.9)  
DIA.  
.028 (0.7)  
1.0 (25.4)  
MIN.  
* Weight: 0.33 gram  
.205 (5.2)  
.166 (4.2)  
.107 (2.7)  
DIA.  
.080 (2.0)  
1.0 (25.4)  
MIN.  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS (At T  
A
= 25oC unless otherwise noted)  
RATINGS  
SYMBOL  
1N5817  
20  
1N5818  
30  
1N5819  
40  
UNITS  
V
V
RRM  
Volts  
Volts  
Volts  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
RMS  
14  
20  
21  
30  
28  
40  
V
DC  
O
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified Current  
.375” (9.5mm) lead length at TL  
= 90oC  
I
1.0  
25  
Amps  
Peak Forward Surge Current 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
I
FSM  
Amps  
Typical Thermal Resistance (Note) 1  
Typical Junction Capacitance (Note 2)  
Storage Operating Temperature Range  
R θ J A  
80  
110  
0C/W  
pF  
0 C  
CJ  
T
J
, TSTG  
-65 to + 125  
ELECTRICAL CHARACTERISTICS (At TA  
= 25oC unless otherwise noted)  
CHARACTERISTICS  
Maximum Instantaneous Forward Voltage at 1.0A DC  
Maximum Forward Voltage at 3.1A DC  
SYMBOL  
1N5817  
.45  
1N5818  
.55  
1N5819  
.60  
UNITS  
Volts  
V
V
F
F
.75  
.875  
1.0  
.90  
Volts  
@T  
A
A
= 25oC  
= 100oC  
Maximum Average Reverse Current at  
mAmps  
I
R
Rated DC Blocking Voltage  
@T  
10  
NOTES : 1. Thermal Resistance (Junction to Ambient): Vertical PC Board Mounting, 0.5” (12.7mm) Lead Length.  
2. Measured at 1 MHz and applied reverse voltage of 4.0 volts.  
2001-6  

与1N5819相关器件

型号 品牌 描述 获取价格 数据表
1N5819.TR FAIRCHILD 暂无描述

获取价格

1N5819/1 VISHAY Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2

获取价格

1N5819/4E VISHAY Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2

获取价格

1N5819/4F VISHAY Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2

获取价格

1N5819/4H VISHAY Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2

获取价格

1N5819/51 VISHAY Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2

获取价格