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1N5819/4F PDF预览

1N5819/4F

更新时间: 2023-02-26 15:31:42
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 389K
描述
Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

1N5819/4F 数据手册

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1N5817 thru 1N5819  
Vishay General Semiconductor  
Schottky Barrier Rectifiers  
FEATURES  
• Guardring for overvoltage protection  
• Very small conduction losses  
• Extremely fast switching  
• Low forward voltage drop  
• High frequency operation  
• Solder dip 260 °C, 40 s  
DO-204AL (DO-41)  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in low voltage high frequency inverters,  
freewheeling, dc-to-dc converters, and polarity  
protection applications.  
PRIMARY CHARACTERISTICS  
IF(AV)  
1.0 A  
VRRM  
IFSM  
20 V, 30 V, 40 V  
25 A  
MECHANICAL DATA  
Case: DO-204AL (DO-41)  
VF  
0.45 V, 0.55 V, 0.60 V  
125 °C  
Epoxy meets UL 94V-0 flammability rating  
TJ max.  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
VRRM  
VRMS  
1N5817  
20  
1N5818  
30  
1N5819  
40  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
V
V
V
V
14  
21  
28  
Maximum DC blocking voltage  
Maximum non-repetitive peak reverse voltage  
VDC  
20  
30  
40  
VRSM  
24  
36  
48  
Maximum average forward rectified current  
0.375" (9.5 mm) lead length at TL = 90 °C  
IF(AV)  
1.0  
25  
A
A
Peak forward surge current, 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
Voltage rate of change (rated VR)  
Storage temperature range  
dV/dt  
10 000  
V/µs  
°C  
TJ, TSTG  
- 65 to + 125  
Document Number: 88525  
Revision: 20-Aug-07  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
43  

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