Datasheet > 1N5819

1N5819

更新时间： 2023-12-06 19:52:33

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
2页	208K
描述
Rectifier device Schottky Diode

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1N5819 数据手册

1N5817 - 1N5819

SCHOTTKY BARRIER RECTIFIER DIODE

VOLTAGE RANGE: 20 - 40V

CURRENT: 1.0 A

Features

Schottky Barrier Chip

Guard Ring Die Construction for

Transient Protection

Low Power Loss, High Efficiency

High Surge Capability

! High Current Capability and Low Forward

Voltage Drop

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

Protection Application

Plastic Material: UL Flammability

Classification Rating 94V-0

DO-41

Min

Mechanical Data

Dim

Max

Case: D O - 4 1 Molded Plastic

25.40

4.06

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

5.21

0.864

2.72

0.71

2.00

Weight: 0.34 grams (approx.)

Mounting Position: Any

All Dimensions in mm

Marking: Type Number

@ T_A= 25°C unless otherwise specified

Maximum Ratings and Electrical Characteristics

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

1N5817

1N5818

1N5819

Unit

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_R(RMS)

I_O

RMS Reverse Voltage

Average Rectified Output Current

(Note 1)

1.0

@ T_L= 90°C

Non-Repetitive Peak Forward Surge Current 8.3ms

single half sine-wave superimposed on rated load

(JEDEC Method)

I_FSM

Forward Voltage (Note 2)

@ I_F= 1.0A

@ I_F= 3.0A

0.450

0.750

0.550

0.875

0.60

0.90

V_FM

I_RM

Peak Reverse Leakage Current

at Rated DC Blocking Voltage (Note 2)

@T_A= 25°C

@ T_A= 100°C

1.0

C_T

R_qJL

Typical Total Capacitance (Note 3)

110

Typical Thermal Resistance Junction to Lead (Note 4)

Typical Thermal Resistance Junction to Ambient

Operating and Storage Temperature Range

°C/W

°C

R_qJA

T_j,T_STG

-65 to +125

Notes:

1. Measured at ambient temperature at a distance of 9.5mm from the case.

2. Short duration test pulse used to minimize self-heating effect.

3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

4. Thermal resistance from junction to lead vertical P.C.B. mounted, 0.375" (9.5mm) lead length with 1.5 x 1.5" (38 x 38mm)

copper pads.

1 of 2

www.sunmate.tw

下载PDF

与1N5819相关器件

型号	品牌	描述	获取价格	数据表
1N5819.TR	FAIRCHILD	暂无描述	获取价格
1N5819/1	VISHAY	Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2	获取价格
1N5819/4E	VISHAY	Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2	获取价格
1N5819/4F	VISHAY	Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2	获取价格
1N5819/4H	VISHAY	Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2	获取价格
1N5819/51	VISHAY	Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2	获取价格