5秒后页面跳转
1N5819 PDF预览

1N5819

更新时间: 2024-01-06 21:15:33
品牌 Logo 应用领域
全宇昕 - CYSTEKEC 二极管
页数 文件大小 规格书
3页 137K
描述
1.0Amp Silicon Schottky Barrier Rectifiers

1N5819 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.56
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-G2
元件数量:1端子数量:2
最高工作温度:125 °C最低工作温度:-65 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:0.45 W
最大重复峰值反向电压:40 V表面贴装:YES
技术:SCHOTTKY端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N5819 数据手册

 浏览型号1N5819的Datasheet PDF文件第2页浏览型号1N5819的Datasheet PDF文件第3页 
Spec. No. : C331LB  
Issued Date : 2004.07.05  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 1/3  
1.0Amp Silicon Schottky Barrier Rectifiers  
1N581XLB Series  
Features  
Low forward voltage drop  
High current capability  
High surge current capability  
High reliability  
Epitaxial construction  
Mechanical Data  
Case: DO-41 Molded Plastic.  
Terminals: Axial leads, solderable per MIL-STD-202, Method 208 guaranteed  
Polarity: Color band denotes cathode end.  
Epoxy: UL 94V-0 rate flame retardant  
Mounting position: Any  
Weight: 0.34 grams  
Maximum Ratings and Electrical Characteristics  
Rating at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or  
inductive load. For capacitive load, derate current by 20%.  
Type Number  
1N5817  
20  
1N5818  
30  
1N5819  
40  
Units  
V
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
Maximum DC Blocking Voltage  
14  
21  
28  
V
20  
30  
40  
V
Maximum Average Forward Rectified Current  
.375”(9.5mm) lead length at Ta=90°C  
Peak Forward Surge Current, 8.3ms Single Half Sine-wave  
Superimposed on Rated Load(JEDEC method)  
Maximum Instantaneous Forward Voltage @ 1.0A  
Maximum DC Reverse Current at Rated DC  
Blocking Voltage  
1
A
25  
A
V
0.45  
0.55  
1
0.6  
(@Ta=25°C)  
mA  
pF  
10  
(@Ta=100°C)  
Typical Junction Capacitance (Note 1)  
Typical thermal resistance(Note 2)  
110  
80  
/W  
Operating Temperature Range Tj  
Storage Temperature Range Tstg  
-65 to +125  
-65 to +150  
°C  
°C  
Notes : 1. Measured at 1 MHz and applied reverse voltage of 4.0Volts  
2. Thermal resistance from junction to ambient, vertical PCB mounting, 0.5”(12.7mm) lead length.  
1N581XLB  
CYStek Product Specification  

与1N5819相关器件

型号 品牌 描述 获取价格 数据表
1N5819.TR FAIRCHILD 暂无描述

获取价格

1N5819/1 VISHAY Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2

获取价格

1N5819/4E VISHAY Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2

获取价格

1N5819/4F VISHAY Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2

获取价格

1N5819/4H VISHAY Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2

获取价格

1N5819/51 VISHAY Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2

获取价格