REECCTTRROONN
TECHNICAL SPECIFICATION
SEMICONDUCTOR
1N4148W
SMALL SIGNAL DIODE
VOLTAGE RANGE 75 Volts CURRENT 150mAmpere
FEATURES
* Compact surface mount with same foot print as mini-melf
* High Breakdown Voltage
* Fast Switching Speed
* 400mW Power Dissipation
* General Purpose Switching Applications
* High Conductance
SOD-123
MECHANICAL DATA
* Case: Molded plastic
.110(2.800)
.102(2.600)
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
.067(1.700)
.059(1.500)
* Weight: 0.01 gram
.152(3.850)
.140(3.550)
.049(1.250)
.041(1.050)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
.004(.100)
.000(0.00)
REF .020(0.500)
Dimensions in inches and (millimeters)
O
MAXIMUM RATINGS (@ T
A
=25 C unless otherwise noted)
SYMBOL
VRM
1N4148W
100
UNITS
RATINGS
Volts
Non-Repetitive Peak Reverse Voltage
Maximum Repetitive Peak Reverse Voltage
Maximum Working Peak reverse Voltage
Maximum DC Blocking Voltage
VRRM
VRWM
VR
75
Volts
VRMS
IFM
Volts
Maximum RMS Voltage
53
Maximum Forward Comtinuous Current
Maximum Average Forward Rectified Current
Non-Repetitive Peak Forward Surge Current
300
150
2.0
1.0
mAmps
mAmps
IO
@t=1.0uS
@t=1.0S
IFSM
Trr
Amps
Typical Reverse Recovery Time
Typical Junction Capacitance
Maximum Power Dissipation
4
nS
pF
C
2
400
T
PD
mW
OC/W
OC
R
ΘJA
Typical Thermal Resistance
315
Operating and Storage Temperature Range
TJ, TSTG
-65 to + 150
O
ELECTRICAL CHARACTERISTICS (@T
A
=25 C unless otherwise noted)
SYMBOL
1N4148W
UNITS
Volts
CHARACTERISTICS
@IF=1.0mA
@IF=10mA
@IF=50mA
@IF=150mA
0.715
0.855
1.0
Maximum Instantaneous Forward Voltage
VF
25
@VR=20V
@VR=75V
25
nAmps
uAmps
Maximum Instantaneous Reverse Current
IR
1.0
.
2006-3