Datasheet > 1N3070

1N3070

更新时间： 2023-12-06 20:11:12

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描述
Switching Diodes Switch detector

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1N3070 数据手册

1N3070

SMALL SINGNAL DIODES

DO-35(GLASS)

Features

Silicon Epitaxial Planar Diodes

Micro Melf package

1.0 2(26.0)

MIN.

0.079(2.0)

Mechanical Data

MAX

Case : DO-35 Glass Case

0.165 (4.2)

MAX

Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

Polarity : Color band denotes cathode end

Mounting position : Any

1.0 2(26.0)

MIN.

0.020(0.52)

TYP

Weight : 0.13 gram (approximately)

Dimensions in millimeters

@ T_A= 25°C unless otherwise specified

Maximum Ratings

Symbol

Parameter

Value

Units

Maximum Repetitive Reverse Voltage

Average Rectified Forward Current

200

500

RRM

F(AV)

FSM

Non-repetitive Peak Forward Surge Current

Pulse Width = 1.0 second

1.0

4.0

Pulse Width = 1.0 microsecond

Storage Temperature Range

-65 to +200

175

°C

STG

Operating Junction Temperature

Symbol

Parameter

Power Dissipation

Value

500

Units

°C

Thermal Resistance, Junction to Ambient

300

θJA

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Breakdown Voltage

Test Conditions

I = 100µA

Min.

Max.

Units

200

Forward Voltage

Reverse Leakage

I = 100mA

1.0

V = 175V

100

µA

V = 175V, T = 150°C

Total Capacitance

V = 0V, f = 1.0MHz

Reverse Recovery Time

I = I = 30mA, RL = 100Ω

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