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1812SMS-39N PDF预览

1812SMS-39N

更新时间: 2024-01-01 18:27:46
品牌 Logo 应用领域
飞思卡尔 - FREESCALE 电感器射频感应器
页数 文件大小 规格书
20页 928K
描述
N-Channel Enhancement-Mode Lateral MOSFETs

1812SMS-39N 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:1925
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8504.50.80.00风险等级:5.7
大小写代码:1925构造:Flat Top
型芯材料:AIR直流电阻:0.0044 Ω
标称电感 (L):0.039 µH电感器应用:RF INDUCTOR
电感器类型:GENERAL PURPOSE INDUCTORJESD-609代码:e1
功能数量:1端子数量:2
最高工作温度:140 °C最低工作温度:-40 °C
封装高度:4.2 mm封装长度:4.95 mm
封装形式:SMT封装宽度:6.35 mm
包装方法:TR, 13 Inch最小质量因数(标称电感时):100
自谐振频率:0.0021 MHz形状/尺寸说明:RECTANGULAR PACKAGE
屏蔽:NO表面贴装:YES
端子面层:Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)端子位置:DUAL ENDED
端子形状:FLAT测试频率:150 MHz
容差:5%Base Number Matches:1

1812SMS-39N 数据手册

 浏览型号1812SMS-39N的Datasheet PDF文件第3页浏览型号1812SMS-39N的Datasheet PDF文件第4页浏览型号1812SMS-39N的Datasheet PDF文件第5页浏览型号1812SMS-39N的Datasheet PDF文件第7页浏览型号1812SMS-39N的Datasheet PDF文件第8页浏览型号1812SMS-39N的Datasheet PDF文件第9页 
TYPICAL CHARACTERISTICS — 460-470 MHz  
−25  
−30  
−35  
−40  
−45  
−50  
−55  
−60  
0
V
= 28 Vdc, I = 1250 mA, f1 = 465 MHz  
DQ  
f2 = 467.5 MHz, Two−Tone Measurements  
V
I
= 28 Vdc, P = 100 W (PEP)  
out  
= 1250 mA, Two−Tone Measurements  
DD  
DD  
DQ  
−10 (f1 + f2)/2 = Center Frequency of 465 MHz  
3rd Order  
−20  
−30  
3rd Order  
5th Order  
5th Order  
7th Order  
−40  
−50  
7th Order  
10  
100  
, OUTPUT POWER (WATTS) PEP  
200  
0.1  
1
10  
60  
P
out  
TWO−TONE SPACING (MHz)  
Figure 7. Intermodulation Distortion Products  
versus Output Power  
Figure 8. Intermodulation Distortion Products  
versus Tone Spacing  
60  
56  
P6dB = 53.57 dBm (227 W)  
Ideal  
P3dB = 52.99 dBm (198 W)  
P1dB = 52.21 dBm (166 W)  
52  
48  
44  
40  
Actual  
V
DD  
= 28 Vdc, I = 1250 mA  
DQ  
Pulsed CW, 8 μsec(on), 1 msec(off)  
f = 465 MHz  
19  
23  
27  
31  
35  
39  
P , INPUT POWER (dBm)  
in  
Figure 9. Pulse CW Output Power versus  
Input Power  
50  
40  
30  
20  
10  
0
−35  
V
= 28 Vdc, I = 1250 mA, f = 465 MHz  
DQ  
DD  
N−CDMA IS−95 (Pilot, Sync, Paging  
Traffic Codes 8 Through 13)  
−43  
−51  
−59  
−67  
−75  
ACPR  
−30_C  
25_C  
85_C  
G
ps  
T = −30_C  
C
85_C  
25_C  
25_C  
η
D
ALT1  
−30_C  
85_C  
10  
25_C  
1
60  
P , OUTPUT POWER (WATTS) AVG.  
out  
Figure 10. Single-Carrier N-CDMA ACPR, ALT1, Power Gain  
and Drain Efficiency versus Output Power  
MRF5S4140HR3 MRF5S4140HSR3  
RF Device Data  
Freescale Semiconductor  
6

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