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1800PT_18 PDF预览

1800PT_18

更新时间: 2022-02-26 10:13:50
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尼尔 - NELLSEMI /
页数 文件大小 规格书
6页 669K
描述
Phase Control Thyristors

1800PT_18 数据手册

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RoHS  
1800PT Series  
Nell High Power Products  
FORWARD CONDUCTION  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
1800(720)  
55(85)  
UNIT  
A
ºC  
A
Maximum average current  
at heatsink temperature  
180° conduction, half sine wave  
IT(AV)  
double side (single side) cooled  
IT(RMS)  
DC at 25°C heatsink temperature double side cooled  
Maximum RMS on-state current  
3300  
35000  
36645  
29400  
30782  
6125  
5573  
4322  
3932  
61250  
0.90  
t = 10ms  
No voltage  
reapplied  
t = 8.3ms  
Maximum peak, one cycle  
non-reptitive surge current  
ITSM  
A
t = 10ms  
100%VRRM  
reapplied  
t = 8.3ms  
Sinusoidal half wave,  
initial TJ = TJ maximum  
t = 10ms  
No voltage  
reapplied  
t = 8.3ms  
2
kA s  
Maximum l²t for fusing  
2
I t  
t = 10ms  
100%VRRM  
reapplied  
t = 8.3ms  
2
kA s  
2
I t  
t = 0.1 to 10 ms, no voltage reapplied  
Maximum l²t for fusing  
V
(16.7% x π x lT(AV) < I < π x lT(AV)),TJ=TJ maximum  
(I > π x lT(AV)),TJ =TJ maximum  
(16.7% x π x lT(AV) < I < π x lT(AV)),TJ=TJ maximum  
(I > π x lT(AV)),TJ=TJ maximum  
Low level value of threshold voltage  
High level value of threshold voltage  
Low level value on-state slope resistance  
High level value on-state slope resistance  
Maximum on-state voltage  
T(TO)1  
V
V
T(TO)2  
1.00  
rt1  
rt2  
VTM  
lH  
0.17  
mΩ  
0.16  
lpk =4000A,TJ=TJ maximum, tp=10 ms sine pulse  
1.60  
V
Maximum holding current  
300  
TJ = 25°C, anode supply 12V resistive load  
mA  
Typical latching current  
lL  
500  
SWITCHING  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNIT  
Gate drive 20V, 20Ω, tr ≤ 1µs  
Maximum non-repetitive rate of rise  
of turned-on current  
A/µs  
dl/dt  
1000  
TJ =TJ maximum, anode voltage ≤ 80% VDRM  
Gate current 1A, dlg/dt =1 A/µs  
Vd = 0.67 VDRM, TJ = 25°C  
Typical delay time  
td  
1.90  
µs  
lTM = 550A, TJ =TJ maximum, dl/dt = 40A/µs.  
tq  
Typical turn-off time  
200  
VR = 50V, dV/dt = 20 V/µs, gate 0 V 100Ω, tp = 500µs  
BLOCKING  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNIT  
Maximum critical rate of rise of  
off-state voltage  
TJ =TJ maximum linear to 80% rated VDRM  
V/µs  
dV/dt  
500  
Maximum peak reverse and  
off-state leakage current  
lRRM,  
lDRM,  
TJ =TJ maximum, rated VDRM/VRRM applied  
100  
mA  
Page 2 of 6  
www.nellsemi.com  

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