RoHS
RoHS
16T Series
SEMICONDUCTOR
Fig.6 surge peak on- state current versus number
of cycles
Fig.5 On-state characteristics (maximum values)
ITSM(A)
I
(A)
200
100
180
T max.
j
160
V
R
= 0.85 V
= 25 mΩ
to
140
120
100
80
t=20ms
d
One cycle
Non repetitive
T =T max
j
j
T initial=25°C
j
T =25°C
j
10
1
Repetitive
Tc=85°C
60
40
VTM(V)
20
0
Number of cycles
10
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1
100
1000
Fig7. Non-repetitive surge peak on-state
current for a sinusoidal
Fig.8 Relative variation of gate trigger current
ITSM(A), I²t(A²S)
IGT,IH,IL[Tj] / IGT,IH,IL[Tj = 25°C]
3000
1000
2.5
dI/dt limitation:
50A/µs
Tj initial=25°C
2.0
IGT
1.5
1.0
ITSM
IH & IL
0.5
0.0
pulse with width tp<10ms and
corresponding value of l²t
l²t
Tj(°C)
100
0.01
0.10
1.00
10.00
-40
-20
0
20
40
60
80
100
120
140
Fig.9 Relative variation of critical rate of
decrease of main current versus
(dV/dt)c (typical values)
Fig.10 Relative variation of critical rate of
decrease of main current versus
(dV/dt)c (typical values)
(dI/dt)c [Tj] (dl/dt)c [Tj specified ]
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.0
1.8
1.6
1.4
1.2
1.0
6
snubberless and Logic level types
SW
standard types
5
4
C
B
3
2
1
0
CW/BW
0.8
0.6
Tj(°C)
0.4
0.1
1.0
10.0
100.0
0
25
50
75
100
125
(dV/dt)c (V/µs)
Page 5 of 7
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