生命周期: | Transferred | 包装说明: | POST/STUD MOUNT, O-MUPM-H3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.30.00.80 | 风险等级: | 5.69 |
关态电压最小值的临界上升速率: | 200 V/us | 最大直流栅极触发电流: | 150 mA |
最大直流栅极触发电压: | 3 V | JESD-30 代码: | O-MUPM-H3 |
最大漏电流: | 20 mA | 通态非重复峰值电流: | 3500 A |
端子数量: | 3 | 最大通态电流: | 235000 A |
最高工作温度: | 125 °C | 最低工作温度: | -45 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | POST/STUD MOUNT | 认证状态: | Not Qualified |
断态重复峰值电压: | 400 V | 子类别: | Silicon Controlled Rectifiers |
表面贴装: | NO | 端子形式: | HIGH CURRENT CABLE |
端子位置: | UPPER | 触发设备类型: | SCR |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
158RP60 | NIEC | Silicon Controlled Rectifier, 235000mA I(T), 600V V(DRM), |
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158RP80 | NIEC | Silicon Controlled Rectifier, 235000mA I(T), 800V V(DRM), |
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158RT180 | NIEC | Silicon Controlled Rectifier, 235000mA I(T), 1800V V(DRM), |
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158RT200 | NIEC | Silicon Controlled Rectifier, 235000mA I(T), 2000V V(DRM), |
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158RT250 | NIEC | Silicon Controlled Rectifier, 235000mA I(T), 2500V V(DRM), |
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158RZM010M1320 | ILLINOISCAPACITOR | +105°C High Frequency Radial Lead Aluminum El |
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