Datasheet > 15022XL-1050

15022XL-1050

更新时间： 2024-10-02 01:24:11

品牌	Logo	应用领域
OSA		/
页数	文件大小	规格书
2页	300K
描述
High Speed MQW IR-Chip

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中文翻译

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数据手册

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15022XL-1050 数据手册

[1] of [2]

High Power / High Speed MQW IR-Chip

15022XL-1050

• Mechanical Specification:

Dimension

Chip size: 960 x 960µm

Thickness: typ. 270µm

Electrodes / Metallization

p-side (anode):

n-side (cathode)

Au alloy

960

708

p-Electrode

116

p-Epitaxy

active layer

n-Epitaxy

116

270

typ.

n-Substrate GaAs

n-Electrode

708

960

• Electrical and Optical Characteristics (T=25°C):

Parameter

Symbol

Condition

Min.

Typ.

Max.

Unit

Vf₁

If = 100mA

If = 350mA

Vr = 5V

1.15

1.20

1.25

1.40

Forward Voltage

Vf₂

Reverse Current

Output Power ⁽¹⁾

Radiant Intensity ⁽¹⁾

Switching Time

FWHM

µA

If = 50mA

If = 350mA

3.5

6.5

mW/sr

Φe

tr, tf

½ λp

λp

Peak Wavelength

1030

1050

1070

NOTE:

(1) Power is measured by OSA on gold plate

www.osa-opto.com

201206 rev. 1

中文翻译

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