Datasheet > 13003DHG-C-T60-K

13003DHG-C-T60-K

更新时间： 2022-02-26 10:02:11

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描述
NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION

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13003DHG-C-T60-K 数据手册

13003DH

Preliminary

NPN SILICON TRANSISTOR



ABSOLUTE MAXIMUM RATINGS (T_A=25°C, unless otherwise noted)

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATINGS

600

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

400

Continuous Collector Current

1.8

T_A=25°C

T_C=25°C

1.25

°C

Power Dissipation

P_D

Junction Temperature

T_J

150

Storage Temperature Range

T_STG

-55~+150

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (T_A=25°C, unless otherwise noted)

PARAMETER

SYMBOL

BV_CBO

BV_CEO

BV_EBO

I_CBO

TEST CONDITIONS

I_C=0.1mA

MIN TYP MAX UNIT

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

600

400

I_C=1mA

I_E=0.1mA

V_CB=600V, I_E=0

V_CE=400V, I_B=0

V_EB=9V, I_C=0

0.1 mA

Collector-Emitter Cut-Off Current

Emitter-Base Cut-Off Current

DC Current Gain (Note 1)

I_CEO

I_EBO

h_FE

I_C=0.2A, V_CE=5.0V

h_FE1: V_CE=5V, I_C=5mA

h_FE2: V_CE=5V, I_C=0.2A

Low current and high current h_FE2h_FE1ratio

h_FE1/ h_FE2

0.75 0.9

Collector-Emitter Saturation Voltage (Note)

Base-Emitter Saturation Voltage (Note)

Storage Time

V_CE(SAT)I_C=1A, I_B=0.25A

0.30 0.8

0.9 1.2

V_BE(SAT)

I_C=1A, I_B=0.25A

t_S

t_R

t_F

μs

MHz

UI9600，I_C=0.1A

Rise Time

Fall Time

Transition Frequency

Diode Forward Voltage

f_T

I_C=0.1A, V_CE=10V, f=1MHz

I_F=1.5A

V_F

2.5

Note: Pulse test, pulse width tp≤300µs, Duty cycle≤2%



CLASSIFICATION OF h_FE

RANK

RANGE

15 ~ 20

20 ~ 25

25 ~ 30

UNISONIC TECHNOLOGIES CO., LTD

3 of 4

QW-R223-011.b

www.unisonic.com.tw

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