Datasheet > 13003DEL-X-T92-A-B

13003DEL-X-T92-A-B

更新时间： 2022-02-26 10:30:33

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描述
SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS

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13003DEL-X-T92-A-B 数据手册

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13003DE

Preliminary

NPN SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATINGS (T_A=25°C, unless otherwise noted)

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATINGS

600

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

400

Continuous Collector Current

Power Dissipation

1.3

P_D

0.8

°C

Junction Temperature

Storage Temperature Range

T_J

150

T_STG

-55~+150

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

Junction to Ambient

SYMBOL

RATING

156

UNIT

°C/W

θ_JA

ELECTRICAL CHARACTERISTICS (T_A=25°C, unless otherwise noted)

PARAMETER

SYMBOL

BV_CBO

BV_CEO

BV_EBO

I_CBO

TEST CONDITIONS

I_C=0.1mA

MIN TYP MAX UNIT

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

600

400

I_C=1mA

I_E=0.1mA

V_CB=600V, I_E=0

V_CE=400V, I_B=0

V_EB=9V, I_C=0

0.1 mA

Collector-Emitter Cut-Off Current

Emitter-Base Cut-Off Current

DC Current Gain (Note 1)

I_CEO

I_EBO

h_FE

I_C=0.2A, V_CE=5.0V

h_FE1: V_CE=5V, I_C=5mA

h_FE2: V_CE=5V, I_C=0.2A

Low current and high current h_FE2h_FE1ratio

h_FE1/ h_FE2

0.75 0.9

Collector-Emitter Saturation Voltage (Note)

Base-Emitter Saturation Voltage (Note)

Storage Time

V_CE(SAT)I_C=0.5A, I_B=0.1A

0.22 0.8

V_BE(SAT)

I_C=0.5A, I_B=0.1A

1.5

t_S

t_R

t_F

μs

MHz

Rise Time

UI9600, I_C=0.1A

Fall Time

Transition Frequency

Diode Forward Voltage

f_T

I_C=0.2A, V_CE=10V, f=1MHz

I_F=1A

V_F

1.5

Note: Pulse test, pulse width tp≤300µs, Duty cycle≤2%

CLASSIFICATION OF h_FE

RANK

RANGE

15 ~ 20

20 ~ 25

25 ~ 30

UNISONIC TECHNOLOGIES CO., LTD

2 of 3

QW-R223-013.c

www.unisonic.com.tw

123

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