Datasheet > 12NN10G-S08-R

12NN10G-S08-R

更新时间： 2022-09-11 01:33:07

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
4页	156K
描述
DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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12NN10G-S08-R 数据手册

UNISONIC TECHNOLOGIES CO., LTD

12NN10

Preliminary

Power MOSFET

DUAL N-CHANNEL

ENHANCEMENT MODE POWER

MOSFET

DESCRIPTION

SOP-8

The UTC 12NN10 is a dual N-Channel enhancement mode power

MOSFET, it provides designer with fast switching speed, ruggedized

device design, low on-resistance and cost-effectiveness.

FEATURES

* Low Gate Charge (Typically 10nC)

* 2.5A, 100V, 150mΩ @ V_GS=10V

* Fast Switching Speed

* Simple Drive Requirement

SYMBOL

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

SOP-8

Packing

Lead Free

Halogen Free

12NN10L-S08-R 12NN10G-S08-R

S1 G1 S2 G2 D2 D2 D1 D1

Tape Reel

Note: Pin Assignment: G: Gate D: Drain

S: Source

www.unisonic.com.tw

1 of 4

QW-R502-506.a

12 3 4

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型号	品牌	描述	获取价格	数据表
12NN10L-S08-R	UTC	DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET	获取价格
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12NPCN30-60Z-50R0J	APITECH	RF/Microwave Termination,	获取价格