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123NQ080 PDF预览

123NQ080

更新时间: 2024-01-03 12:22:20
品牌 Logo 应用领域
桑德斯 - SMC 局域网二极管
页数 文件大小 规格书
4页 225K
描述
SCHOTTKY RECTIFIER

123NQ080 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred包装说明:R-PUFM-X1
针数:1Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.52其他特性:FREE WHEELING DIODE, HIGH RELIABILITY
应用:GENERAL PURPOSE外壳连接:ANODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PUFM-X1
最大非重复峰值正向电流:16000 A元件数量:1
相数:1端子数量:1
最大输出电流:120 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:80 V表面贴装:NO
技术:SCHOTTKY端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:40
Base Number Matches:1

123NQ080 数据手册

 浏览型号123NQ080的Datasheet PDF文件第1页浏览型号123NQ080的Datasheet PDF文件第3页浏览型号123NQ080的Datasheet PDF文件第4页 
SANGDEST  
123NQ080/R-1  
123NQ100/R-1  
MICROELECTRONICS  
Technical Data  
Data Sheet N1161, Rev. -  
Green Products  
Maximum Ratings:  
Characteristics  
Symbol  
Condition  
Max.  
Units  
Peak Inverse Voltage  
VRWM  
-
80  
123NQ080(R)-1  
V
100 123NQ100(R)-1  
120  
Max. Average Forward  
Current  
IF(AV)  
50% duty cycle @TC =133°C,  
rectangular wave form  
A
Max. Peak One Cycle Non-  
Repetitive Surge Current  
(per leg)  
IFSM  
EAS  
8.3 ms, half Sine pulse  
2520  
15  
A
Non-Repetitive  
Energy  
Avalanche  
TJ=25,IAS=1A,L=30mH  
mJ  
Current decaying linearly to  
zero in 1 μsec Frequency  
limited by TJ max. VA=1.5×  
VR typical  
Repetitive Avalanche Current  
IAR  
1
A
Electrical Characteristics:  
Characteristics  
Max. Forward Voltage Drop*  
Symbol  
Condition  
Max.  
0.91  
1.08  
Units  
@ 120A, Pulse, TJ = 25 °C  
@ 240A, Pulse, TJ = 25 °C  
@ 120A, Pulse, TJ = 125 °C  
@ 240A, Pulse, TJ = 125 °C  
VF1  
V
0.74  
0.88  
VF2  
V
Max. Reverse Current (per  
leg) *  
IR1  
IR2  
3
40  
mA  
mA  
@VR = rated V  
R
TJ = 25 °C  
TJ = 125 °C  
@VR = rated V  
R
Max. Junction Capacitance  
(per leg)  
@VR = 5V, TC = 25 °C  
SIG = 1MHz  
CT  
2650  
pF  
f
Typical Series Inductance  
(per leg)  
Measured lead to lead 5 mm  
from package body  
LS  
7.0  
nH  
Max. Voltage Rate of Change  
dv/dt  
-
10,000  
V/μs  
z
Pulse Width < 300µs, Duty Cycle <2%  
Thermal-Mechanical Specifications:  
Characteristics  
Max. Junction Temperature  
Max. Storage Temperature  
Symbol  
TJ  
Condition  
Specification  
-55 to +175  
-55 to +175  
Units  
°C  
°C  
-
-
Tstg  
Maximum Thermal  
Resistance Junction to Case  
DC operation  
0.40  
0.15  
RθJC  
Rθcs  
°C/W  
°C/W  
Typical Thermal Resistance,  
case to Heat Sink  
Mounting surface, smooth  
and greased  
Mounting  
Torque  
Terminal  
Torque  
23(min)  
29(max)  
35(min)  
46(max)  
Mounting Torque  
TM  
Non-lubricated threads  
Kg-cm  
g
Approximate Weight  
Case Style  
wt  
-
25.6  
PRM1-1  
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •  
FAX (86) 25-87123900 World Wide Web Site - http://www.sangdest.com.cn E-Mail Address - sales@ sangdest.com.cn •  

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