Datasheet > 存储 > EEPROM> 11AA160-I/P

11AA160-I/P

更新时间： 2024-02-24 14:16:51

品牌	Logo	应用领域
美国微芯 - MICROCHIP		存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数	文件大小	规格书
38页	571K
描述
1K-16K UNI/O® Serial EEPROM Family Data Sheet

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技术参数
数据手册

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11AA160-I/P 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	SOT-23
包装说明：	TSSOP, TO-236	针数：	3
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8542.32.00.51	Factory Lead Time：	15 weeks
风险等级：	1.23	最大时钟频率 (fCLK)：	1 MHz
数据保留时间-最小值：	200	耐久性：	1000000 Write/Erase Cycles
JESD-30 代码：	R-PDSO-G3	JESD-609代码：	e3
长度：	2.9 mm	内存密度：	16384 bit
内存集成电路类型：	EEPROM	内存宽度：	8
湿度敏感等级：	1	功能数量：	1
端子数量：	3	字数：	2048 words
字数代码：	2000	工作模式：	SYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	2KX8	封装主体材料：	PLASTIC/EPOXY
封装代码：	TSSOP	封装等效代码：	TO-236
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行：	SERIAL	峰值回流温度（摄氏度）：	260
电源：	2/5 V	认证状态：	Not Qualified
座面最大高度：	1.12 mm	串行总线类型：	1-WIRE
最大待机电流：	0.000005 A	子类别：	EEPROMs
最大压摆率：	0.005 mA	最大供电电压 (Vsup)：	5.5 V
最小供电电压 (Vsup)：	1.8 V	标称供电电压 (Vsup)：	5 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子面层：	Matte Tin (Sn)
端子形式：	GULL WING	端子节距：	0.95 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	40
宽度：	1.3 mm	最长写入周期时间 (tWC)：	10 ms
写保护：	SOFTWARE	Base Number Matches：	1

11AA160-I/P 数据手册

11AAXXX/11LCXXX

If a command is terminated in any manner other than a

NoMAK/SAK combination, then the master must per-

form a standby pulse before beginning a new com-

mand, regardless of which device is to be selected.

3.0

3.1

BUS CHARACTERISTICS

Standby Pulse

When the master has control of SCIO, a standby pulse

can be generated by holding SCIO high for TSTBY. At

this time, the 11XX will reset and return to Standby

mode. Subsequently, a high-to-low transition on SCIO

(the first low pulse of the header) will return the device

to the active state.

Note: After a POR/BOR event occurs, a low-

to-high transition on SCIO must be gen-

erated before proceeding with communi-

cation, including a standby pulse.

An example of two consecutive commands is shown in

Figure 3-1. Note that the device address is the same

for both commands, indicating that the same device is

being selected both times.

Once a command is terminated satisfactorily (i.e., via

a NoMAK/SAK combination during the Acknowledge

sequence), performing a standby pulse is not required

to begin a new command as long as the device to be

selected is the same device selected during the previ-

ous command. However, a period of TSS must be

observed after the end of the command and before the

beginning of the start header. After TSS, the start

header (including THDR low pulse) can be transmitted

in order to begin the new command.

A standby pulse cannot be generated while the slave

has control of SCIO. In this situation, the master must

wait for the slave to finish transmitting and to release

SCIO before the pulse can be generated.

If, at any point during a command, an error is detected

by the master, a standby pulse should be generated

and the command should be performed again.

FIGURE 3-1:

CONSECUTIVE COMMANDS EXAMPLE

Standby Pulse⁽¹⁾

Device Address

Start Header

SCIO

0 1 0 1 0 1 0 1

1 0 1 0 0 0 0 0

Device Address

Start Header

SCIO

0 1 0 1 0 1 0 1

1 0 1 0 0 0 0 0

Note 1: After a POR/BOR event, a low-to-high transition on SCIO is required to occur before the first

standby pulse.

When a standby pulse is not required (i.e., between

successive commands to the same device), a period of

3.2

Start Data Transfer

All operations must be preceded by a start header. The

start header consists of holding SCIO low for a period

of THDR, followed by transmitting an 8-bit ‘01010101’

code. This code is used to synchronize the slave’s

internal clock period with the master’s clock period, so

accurate timing is very important.

TSS must be observed after the end of the command

and before the beginning of the start header.

Figure 3-2 shows the waveform for the start header,

including the required Acknowledge sequence at the

end of the byte.

FIGURE 3-2:

START HEADER

SCIO

TSS

THDR Data ‘0’ Data ‘1’ Data ‘0’ Data ‘1’ Data ‘0’ Data ‘1’ Data ‘0’ Data ‘1’

MAK

NoSAK

Preliminary

DS22067E-page 7

1...4 5 678 9 10...38

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与11AA160-I/P相关器件

型号	品牌	描述	获取价格	数据表
11AA160-I/S16K	MICROCHIP	16K, 2048 X 8 1.8V SERIAL EE, IND, DIE IN WAFFLE PACK	获取价格
11AA160-I/SN	MICROCHIP	1K-16K UNI/O® Serial EEPROM Family Data Sheet	获取价格
11AA160-I/TO	MICROCHIP	2K X 8 1-WIRE SERIAL EEPROM, PBCY3, ROHS COMPLIANT, PLASTIC, TO-92, 3 PIN	获取价格
11AA160-I/TT	MICROCHIP	1K-16K UNI/O® Serial EEPROM Family Data Sheet	获取价格
11AA160-I/W16K	MICROCHIP	16K, 2048 X 8 1.8V SERIAL EE, IND, WAFER	获取价格
11AA160-ICS16K	MICROCHIP	1K-16K UNI/O® Serial EEPROM Family Data Sheet	获取价格

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