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11AA02E48_16 PDF预览

11AA02E48_16

更新时间: 2022-02-26 12:06:02
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
32页 494K
描述
2K UNI/O® Serial EEPROMs with EUI-48™ or EUI-64™ Node Identity

11AA02E48_16 数据手册

 浏览型号11AA02E48_16的Datasheet PDF文件第1页浏览型号11AA02E48_16的Datasheet PDF文件第3页浏览型号11AA02E48_16的Datasheet PDF文件第4页浏览型号11AA02E48_16的Datasheet PDF文件第5页浏览型号11AA02E48_16的Datasheet PDF文件第6页浏览型号11AA02E48_16的Datasheet PDF文件第7页 
11AA02E48/11AA02E64  
1.0  
ELECTRICAL CHARACTERISTICS  
(†)  
Absolute Maximum Ratings  
VCC.............................................................................................................................................................................6.5V  
SCIO w.r.t. VSS.................................................................................................................................... -0.6V to VCC+1.0V  
Storage temperature .................................................................................................................................-65°C to 150°C  
Ambient temperature under bias.................................................................................................................-40°C to 85°C  
ESD protection on all pins..........................................................................................................................................4 kV  
† NOTICE: Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the  
device. This is a stress rating only and functional operation of the device at those or any other conditions above those  
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an  
extended period of time may affect device reliability.  
TABLE 1-1:  
DC CHARACTERISTICS  
Electrical Characteristics:  
DC CHARACTERISTICS  
Industrial (I):  
VCC = 2.5V to 5.5V  
VCC = 1.8V to 2.5V  
TA = -40°C to +85°C  
TA = -20°C to +85°C  
Param.  
Symbol  
Characteristic  
Min.  
Max.  
Units  
Test Conditions  
No.  
D1  
VIH  
High-Level Input  
Voltage  
0.7 VCC  
VCC+1  
V
D2  
D3  
VIL  
Low-Level Input  
Voltage  
-0.3  
-0.3  
0.3 VCC  
0.2 VCC  
V
V
V
VCC 2.5V  
VCC < 2.5V  
VHYS  
Hysteresis of Schmitt 0.05 Vcc  
Trigger Inputs  
VCC 2.5V (Note 1)  
(SCIO)  
D4  
D5  
D6  
VOH  
VOL  
IO  
High-Level Output  
Voltage  
VCC -0.5  
V
V
IOH = -300 µA, VCC = 5.5V  
IOH = -200 µA, Vcc = 2.5V  
IOI = 300 µA, VCC = 5.5V  
IOI = 200 µA, Vcc = 2.5V  
VCC = 5.5V (Note 1)  
VCC -0.5  
Low-Level Output  
Voltage  
0.4  
0.4  
±4  
±3  
±1  
V
V
Output Current Limit  
(Note 2)  
mA  
mA  
µA  
Vcc = 2.5V (Note 1)  
D7  
D8  
ILI  
Input Leakage  
Current (SCIO)  
VIN = VSS or VCC  
CINT  
Internal Capacitance  
(all inputs and  
outputs)  
7
pF  
TA = 25°C, FCLK = 1 MHz,  
VCC = 5.0V (Note 1)  
D9  
ICCREAD Read Operating  
Current  
3
1
mA  
mA  
VCC = 5.5V, FBUS = 100 kHz,  
CB = 100 pF  
VCC = 2.5V, FBUS = 100 kHz,  
CB = 100 pF  
D10  
ICCWRITE Write Operating  
Current  
5
3
mA  
mA  
µA  
VCC = 5.5V  
VCC = 2.5V  
D11  
D12  
Iccs  
ICCI  
Standby Current  
1
VCC = 5.5V, TA = 85°C  
VCC = 5.5V  
Idle Mode Current  
50  
µA  
Note 1: This parameter is periodically sampled and not 100% tested.  
2: The SCIO output driver impedance will vary to ensure IO is not exceeded.  
DS20002122D-page 2  
2008-2016 Microchip Technology Inc.  

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