Datasheet > 11AA02E48T

11AA02E48T

更新时间： 2022-02-26 12:06:02

品牌	Logo	应用领域
美国微芯 - MICROCHIP		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
32页	494K
描述
2K UNI/OÂ® Serial EEPROMs with EUI-48â¢ or EUI-64â¢ Node Identity

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11AA02E48T 数据手册

11AA02E48/11AA02E64

™

2K UNI/O Serial EEPROMs with EUI-48 or EUI-64 Node Identity

Device Selection Table

Density

(bits)

Page Size

(Bytes)

Temp.

Ranges

Part Number

VCC Range

Packages

Node Address

11AA02E48

11AA02E64

1.8V-5.5V

SN, TT

EUI-48^™

EUI-64^™

Features

Description

• Pre-Programmed Globally Unique, 48-Bit or

64-Bit Node Address

• Compatible with EUI-48^™and EUI-64^™

• Single I/O, UNI/O^®Serial Interface Bus

• Low-Power CMOS Technology:

The

Microchip

Technology

Inc.

11AA02E48/11AA02E64 (11AA02EXX⁽¹⁾) device is a

2 Kbit Serial Electrically Erasable PROM. The device is

organized in blocks of x8-bit memory and support the

patented⁽²⁾single I/O UNI/O^®serial bus. By using

Manchester encoding techniques, the clock and data

are combined into a single, serial bit stream (SCIO),

where the clock signal is extracted by the receiver to

correctly decode the timing and value of each bit.

- 1 mA active current, typical

- 1 µA standby current, maximum

• 256 x 8-Bit Organization

• Schmitt Trigger Inputs for Noise Suppression

• Output Slope Control to Eliminate Ground Bounce

Note 1: 11AA02EXX is used in this document as

a generic part number for the 11AA02E48

and 11AA02E64 devices.

• 100 kbps Maximum Bit Rate – Equivalent to

100 kHz Clock Frequency

2: Microchip’s UNI/O^®Bus products are

covered by the following patents issued

in the U.S.A.: 7,376,020 and 7,788,430.

• Self-Timed Write Cycle (including Auto-Erase)

• Page-Write Buffer for up to 16 Bytes

• STATUS Register for Added Control:

- Write Enable Latch bit

Low-voltage design permits operation down to 1.8V,

with standby and active currents of only 1 µA and

1 mA, respectively.

- Write-In-Progress bit

• Block Write Protection:

The 11AA02EXX is available in standard 8-lead

SOIC and 3-lead SOT-23 packages.

- Protect none, 1/4, 1/2 or all of array

• Built-in Write Protection:

- Power-on/off data protection circuitry

- Write enable latch

Package Types (not to scale)

• High Reliability:

3-Lead SOT-23

(TT)

SOIC

(SN)

- Endurance: 1,000,000 erase/write cycles

- Data retention: >200 years

VCC

- ESD protection: >4,000V

VCC

• 3-Lead SOT-23 and 8-Lead SOIC Packages

• Pb-Free and RoHS Compliant

• Available Temperature Ranges:

VSS

SCIO

VSS

SCIO

- Industrial (I):

-40°C to +85°C

Pin Function Table

Name

Function

SCIO

VSS

Serial Clock, Data Input/Output

Ground

VCC

Supply Voltage

 2008-2016 Microchip Technology Inc.

DS20002122D-page 1

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