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11AA020-E/MNY PDF预览

11AA020-E/MNY

更新时间: 2024-02-14 01:30:15
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
38页 571K
描述
1K-16K UNI/O® Serial EEPROM Family Data Sheet

11AA020-E/MNY 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-92
包装说明:ROHS COMPLIANT, PLASTIC, TO-92, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.59
最大时钟频率 (fCLK):1 MHzJESD-30 代码:X-PBCY-T3
JESD-609代码:e3内存密度:2048 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:3
字数:256 words字数代码:256
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:256X8
封装主体材料:PLASTIC/EPOXY封装代码:TO-92
封装形状:UNSPECIFIED封装形式:CYLINDRICAL
并行/串行:SERIAL峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified串行总线类型:1-WIRE
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.8 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:INDUSTRIAL
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
最长写入周期时间 (tWC):10 msBase Number Matches:1

11AA020-E/MNY 数据手册

 浏览型号11AA020-E/MNY的Datasheet PDF文件第6页浏览型号11AA020-E/MNY的Datasheet PDF文件第7页浏览型号11AA020-E/MNY的Datasheet PDF文件第8页浏览型号11AA020-E/MNY的Datasheet PDF文件第10页浏览型号11AA020-E/MNY的Datasheet PDF文件第11页浏览型号11AA020-E/MNY的Datasheet PDF文件第12页 
11AAXXX/11LCXXX  
3.8.1  
FREQUENCY DRIFT  
3.6  
Device Standby  
Within a system, there is a possibility that frequencies  
can drift due to changes in voltage, temperature, etc.  
The re-synchronization circuitry provides some toler-  
ance for such frequency drift. The tolerance range is  
specified by two parameters, FDRIFT and FDEV. FDRIFT  
specifies the maximum tolerable change in bus fre-  
quency per byte. FDEV specifies the overall limit in fre-  
quency deviation within an operation (i.e., from the end  
of the start header until communication is terminated  
for that operation). The start header at the beginning of  
the next operation will reset the re-synchronization cir-  
cuitry and allow for another FDEV amount of frequency  
drift.  
The 11XX features a low-power Standby mode during  
which the device is waiting to begin a new command.  
A high-to-low transition on SCIO will exit low-power  
mode and prepare the device for receiving the start  
header.  
Standby mode will be entered upon the following  
conditions:  
• A NoMAK followed by a SAK (i.e., valid termina-  
tion of a command)  
• Reception of a standby pulse  
Note: In the case of the WRITE, WRSR, SETAL, or  
ERALcommands, the write cycle is initiated  
upon receipt of the NoMAK, assuming all  
other write requirements have been met.  
3.8.2  
EDGE JITTER  
Ensuring that edge transitions from the master always  
occur exactly in the middle or end of the bit period is not  
always possible. Therefore, the re-synchronization cir-  
cuitry is designed to provide some tolerance for edge  
jitter.  
3.7  
Device Idle  
The 11XX features an Idle mode during which all serial  
data is ignored until a standby pulse occurs. Idle mode  
will be entered upon the following conditions:  
The 11XX adjusts its phase every MAK bit, so TIJIT  
specifies the maximum allowable peak-to-peak jitter  
relative to the previous MAK bit. Since the position of  
the previous MAK bit would be difficult to measure by  
the master, the minimum and maximum jitter values for  
a system should be considered the worst-case. These  
values will be based on the execution time for different  
branch paths in software, jitter due to thermal noise,  
etc.  
• Invalid device address  
• Invalid command byte, including Read, CRRD,  
Write, WRSR, SETAL and ERAL during a write  
cycle.  
• Missed edge transition  
• Reception of a MAK following a WREN, WRDI,  
SETAL, or ERALcommand byte  
• Reception of a MAK following the data byte of a  
The difference between the minimum and maximum  
values, as a percentage of the bit period, should be cal-  
culated and then compared against TIJIT to determine  
jitter compliance.  
WRSRcommand  
An invalid start header will indirectly cause the device  
to enter Idle mode. Whether or not the start header is  
invalid cannot be detected by the slave, but will  
prevent the slave from synchronizing properly with the  
master. If the slave is not synchronized with the  
master, an edge transition will be missed, thus causing  
the device to enter Idle mode.  
Note: Because the 11XX only re-synchronizes  
during the MAK bit, the overall ability to  
remain synchronized depends on a combi-  
nation of frequency drift and edge jitter (i.e.,  
if the MAK bit edge is experiencing the max-  
imum allowable edge jitter, then there is no  
room for frequency drift). Conversely, if the  
frequency has drifted to the maximum  
amount tolerable within a byte, then no edge  
jitter can be present.  
3.8  
Synchronization  
At the beginning of every command, the 11XX utilizes  
the start header to determine the master’s bus clock  
period. This period is then used as a reference for all  
subsequent communication within that command.  
The 11XX features re-synchronization circuitry which  
will monitor the position of the middle data edge during  
each MAK bit and subsequently adjust the internal time  
reference in order to remain synchronized with the  
master.  
There are two variables which can cause the 11XX to  
lose synchronization. The first is frequency drift,  
defined as a change in the bit period, TE. The second is  
edge jitter, which is a single occurrence change in the  
position of an edge within a bit period, while the bit  
period itself remains constant.  
© 2008 Microchip Technology Inc.  
Preliminary  
DS22067E-page 9  

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