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11AA010T-E/TT PDF预览

11AA010T-E/TT

更新时间: 2024-01-25 21:56:04
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
38页 571K
描述
1K-16K UNI/O® Serial EEPROM Family Data Sheet

11AA010T-E/TT 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT-23
包装说明:ROHS COMPLIANT, PLASTIC, SOT-23, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:1.46
最大时钟频率 (fCLK):1 MHz数据保留时间-最小值:200
耐久性:1000000 Write/Erase CyclesJESD-30 代码:R-PDSO-G3
JESD-609代码:e3长度:2.9 mm
内存密度:1024 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:1
功能数量:1端子数量:3
字数:128 words字数代码:128
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:128X8
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TO-236封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:SERIAL
峰值回流温度(摄氏度):260电源:2/5 V
认证状态:Not Qualified座面最大高度:1.12 mm
串行总线类型:1-WIRE最大待机电流:0.000005 A
子类别:EEPROMs最大压摆率:0.005 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.8 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子节距:0.95 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:1.3 mm
最长写入周期时间 (tWC):10 ms写保护:SOFTWARE
Base Number Matches:1

11AA010T-E/TT 数据手册

 浏览型号11AA010T-E/TT的Datasheet PDF文件第7页浏览型号11AA010T-E/TT的Datasheet PDF文件第8页浏览型号11AA010T-E/TT的Datasheet PDF文件第9页浏览型号11AA010T-E/TT的Datasheet PDF文件第11页浏览型号11AA010T-E/TT的Datasheet PDF文件第12页浏览型号11AA010T-E/TT的Datasheet PDF文件第13页 
11AAXXX/11LCXXX  
4.0  
DEVICE COMMANDS  
After the device address byte, a command byte must  
be sent by the master to indicate the type of operation  
to be performed. The code for each instruction is listed  
in Table 4-1.  
TABLE 4-1:  
INSTRUCTION SET  
Instruction Name Instruction Code Hex Code  
Description  
READ  
CRRD  
WRITE  
WREN  
WRDI  
RDSR  
WRSR  
ERAL  
SETAL  
0000 0011  
0000 0110  
0110 1100  
1001 0110  
1001 0001  
0000 0101  
0110 1110  
0110 1101  
0110 0111  
0x03  
0x06  
0x6C  
0x96  
0x91  
0x05  
0x6E  
0x6D  
0x67  
Read data from memory array beginning at specified address  
Read data from current location in memory array  
Write data to memory array beginning at specified address  
Set the write enable latch (enable write operations)  
Reset the write enable latch (disable write operations)  
Read STATUS register  
Write STATUS register  
Write ‘0x00’ to entire array  
Write ‘0xFF’ to entire array  
that the slave should output the next data byte. This  
continues until the master sends a NoMAK, which ends  
the operation.  
4.1  
Read Instruction  
The Read command allows the master to access any  
memory location in a random manner. After the READ  
instruction has been sent to the slave, the two bytes of  
the Word Address are transmitted, with an Acknowl-  
edge sequence being performed after each byte. Then,  
the slave sends the first data byte to the master. If more  
data is to be read, the master sends a MAK, indicating  
To provide sequential reads in this manner, the 11XX  
contains an internal Address Pointer which is incre-  
mented by one after the transmission of each byte. This  
Address Pointer allows the entire memory contents to  
be serially read during one operation. When the highest  
address is reached, the Address Pointer rolls over to  
address ‘0x000’ if the master chooses to continue the  
operation by providing a MAK.  
FIGURE 4-1:  
READ COMMAND SEQUENCE  
Device Address  
Standby Pulse  
Start Header  
SCIO  
0 1 0 1 0 1 0 1  
1 0 1 0 0 0 0 0  
Word Address LSB  
Command  
Word Address MSB  
7 6 5 4 3 2 1 0  
15 14 13 12 11 10 9 8  
SCIO  
SCIO  
0 0 0 0 0 0 1 1  
Data Byte n  
Data Byte 2  
Data Byte 1  
7 6 5 4 3 2 1 0  
7 6 5 4 3 2 1 0  
7 6 5 4 3 2 1 0  
DS22067E-page 10  
Preliminary  
© 2008 Microchip Technology Inc.  

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