Ultra-Low-Power, 7.5Msps, Dual 8-Bit ADC
ELECTRICAL CHARACTERISTICS (continued)
(V
= 3.0V, OV
= 1.8V, V
= V
(internal reference), C ≈ 10pF at digital outputs, f
= 7.5MHz, C
= C = C
REFN COM
DD
DD
REFIN
DD
L
CLK
REFP
= 0.33µF, T = -40°C to +85°C, unless otherwise noted. Typical values are at T = +25°C.) (Note 1)
A
A
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Maximum REFP/REFN/COM Sink
Current
I
2
mA
SINK
REFIN Input Resistance
REFIN Input Current
>500
-0.7
kΩ
µA
UNBUFFERED EXTERNAL REFERENCE (REFIN = GND, V
, V
, and V
are applied
COM
REFP REFN
REFP Input Voltage
REFN Input Voltage
COM Input Voltage
V
V
- V
0.256
V
V
V
REFP
REFN
COM
- V
-0.256
COM
V
R
V
/ 2
DD
COM
Differential Reference Input
Voltage
V
V
- V
REFN
0.512
V
REF
REFP
REFP Input Resistance
Measured between REFP and COM
Measured between REFN and COM
4
4
kΩ
kΩ
REFP
REFN
REFN Input Resistance
R
DIGITAL INPUTS (CLK, PD0, PD1)
0.7 x
CLK
V
DD
Input High Threshold
Input Low Threshold
V
V
V
IH
0.7 x
OV
PD0, PD1
CLK
DD
0.3 x
V
DD
V
IL
0.3 x
PD0, PD1
OV
DD
Input Hysteresis
V
0.1
5
V
HYST
CLK at GND or V
5
5
DD
Digital Input Leakage Current
DI
µA
pF
IN
PD0 and PD1 at OGND or OV
DD
Digital Input Capacitance
DC
IN
DIGITAL OUTPUTS (D7–D0, A/B)
0.2 x
Output Voltage Low
Output Voltage High
V
I
= 200µA
SINK
V
V
OL
OV
DD
0.8 x
OV
V
I = 200µA
SOURCE
OH
DD
Tri-State Leakage Current
Tri-State Output Capacitance
POWER REQUIREMENTS
Analog Supply Voltage
I
5
µA
pF
LEAK
C
5
OUT
V
2.7
1.8
3.0
3.6
V
V
DD
Digital Output Supply Voltage
OV
V
DD
DD
4
_______________________________________________________________________________________