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113MT80KB PDF预览

113MT80KB

更新时间: 2024-02-05 04:39:52
品牌 Logo 应用领域
英飞凌 - INFINEON 栅极局域网
页数 文件大小 规格书
9页 115K
描述
THREE PHASE CONTROLLED BRIDGE

113MT80KB 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:FLANGE MOUNT, R-XUFM-X12
针数:12Reach Compliance Code:compliant
HTS代码:8541.30.00.80Factory Lead Time:18 weeks
风险等级:5.72Is Samacsys:N
其他特性:UL RECOGNIZED外壳连接:ISOLATED
配置:3 PHASE BRIDGE最大直流栅极触发电流:150 mA
最大直流栅极触发电压:4 V快速连接描述:6G
螺丝端子的描述:3AK-2CA-CK最大维持电流:200 mA
JESD-30 代码:R-XUFM-X12最大漏电流:20 mA
通态非重复峰值电流:1180 A元件数量:6
端子数量:12最大通态电流:110000 A
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified断态重复峰值电压:800 V
重复峰值反向电压:800 V子类别:Silicon Controlled Rectifiers
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:SCRBase Number Matches:1

113MT80KB 数据手册

 浏览型号113MT80KB的Datasheet PDF文件第1页浏览型号113MT80KB的Datasheet PDF文件第2页浏览型号113MT80KB的Datasheet PDF文件第4页浏览型号113MT80KB的Datasheet PDF文件第5页浏览型号113MT80KB的Datasheet PDF文件第6页浏览型号113MT80KB的Datasheet PDF文件第7页 
53-93-113MT..KB Series  
Bulletin I27503 08/97  
Blocking  
53MT.KB 93MT.KB 113MT.KB  
Parameter  
52MT.KB 92MT.KB 112MT.KB Units Conditions  
51MT.KB 91MT.KB 111MT.KB  
VINS RMS isolation voltage  
4000  
V
TJ = 25oC all terminal shorted  
f = 50Hz, t = 1s  
dv/dt Max. critical rate of rise  
of off-state voltage (*)  
500  
V/µs TJ = TJ max., linear to 0.67 VDRM  
gate open circuit  
,
(*) Available with dv/dt = 1000V/ms, to complete code add S90 i.e. 113MT160KBS90.  
Triggering  
53MT.KB 93MT.KB 113MT.KB  
Parameter  
52MT.KB 92MT.KB 112MT.KB Units Conditions  
51MT.KB 91MT.KB 111MT.KB  
PGM Max. peak gate power  
10  
W
TJ = TJ max.  
PG(AV) Max. average gate power  
2.5  
IGM  
Max. peak gate current  
2.5  
10  
A
V
-VGT Max. peak negative  
gate voltage  
VGT Max. required DC gate  
voltage to trigger  
4.0  
2.5  
V
TJ=-40°C  
TJ= 25°C Anodesupply=6V,resistiveload  
1.7  
TJ= 125°C  
TJ=-40°C  
IGT  
Max. required DC gate  
current to trigger  
270  
150  
80  
mA TJ= 25°C Anodesupply=6V,resistiveload  
TJ =125°C  
VGD Max. gate voltage  
that will not trigger  
0.25  
V
@ TJ = TJ max., ratedVDRMapplied  
IGD  
Max. gate current  
that will not trigger  
6
mA  
Thermal and Mechanical Specifications  
53MT.KB 93MT.KB 113MT.KB  
Parameter  
52MT.KB 92MT.KB 112MT.KB Units Conditions  
51MT.KB 91MT.KB 111MT.KB  
TJ  
Max. junction operating  
temperature range  
-40 to 125  
°C  
Tstg  
Max. storage temperature  
range  
-40 to 125  
°C  
RthJC Max. thermal resistance,  
junction to case  
0.18  
1.07  
0.19  
1.17  
0.14  
0.86  
0.15  
0.91  
0.03  
0.12  
0.70  
0.12  
0.74  
K/W DC operation per module  
DC operation per junction  
120° Rect condunction angle per module  
120° Rect condunction angle per junction  
RthCS Max. thermal resistance,  
case to heatsink  
K/W Per module  
Mounting surface smooth, flat an greased  
A mounting compound is recommended and the  
Nm  
T
Mounting  
to heatsink  
to terminal  
4 to 6  
3 to 4  
225  
torque should be rechecked after a period of 3  
hoursto allow for the spread of the compound.  
torque ± 10%  
Lubricatedthreads.  
g
wt  
Approximate weight  
3
www.irf.com  

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