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111RKI120PBF PDF预览

111RKI120PBF

更新时间: 2024-02-29 02:09:54
品牌 Logo 应用领域
威世 - VISHAY 栅极触发装置可控硅整流器
页数 文件大小 规格书
7页 139K
描述
Phase Control Thyristors (Stud Version), 110 A

111RKI120PBF 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:TO-94
包装说明:POST/STUD MOUNT, O-CUPM-H3针数:3
Reach Compliance Code:compliantHTS代码:8541.30.00.80
Factory Lead Time:18 weeks风险等级:5.2
Is Samacsys:N标称电路换相断开时间:110 µs
配置:SINGLE关态电压最小值的临界上升速率:500 V/us
最大直流栅极触发电流:120 mA最大直流栅极触发电压:2 V
最大维持电流:200 mAJEDEC-95代码:TO-209AC
JESD-30 代码:O-CUPM-H3最大漏电流:20 mA
通态非重复峰值电流:2180 A元件数量:1
端子数量:3最大通态电流:110000 A
最高工作温度:140 °C最低工作温度:-40 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:POST/STUD MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:172 A
断态重复峰值电压:1200 V重复峰值反向电压:1200 V
子类别:Silicon Controlled Rectifiers表面贴装:NO
端子形式:HIGH CURRENT CABLE端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:SCR
Base Number Matches:1

111RKI120PBF 数据手册

 浏览型号111RKI120PBF的Datasheet PDF文件第1页浏览型号111RKI120PBF的Datasheet PDF文件第2页浏览型号111RKI120PBF的Datasheet PDF文件第4页浏览型号111RKI120PBF的Datasheet PDF文件第5页浏览型号111RKI120PBF的Datasheet PDF文件第6页浏览型号111RKI120PBF的Datasheet PDF文件第7页 
110RKI...PbF/111RKI...PbF Series  
Phase Control Thyristors  
(Stud Version), 110 A  
Vishay High Power Products  
TRIGGERING  
VALUES  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
TJ = TJ maximum, tp 5 ms  
UNITS  
TYP. MAX.  
Maximum peak gate power  
PGM  
PG(AV)  
IGM  
12  
3.0  
3.0  
20  
W
A
Maximum average gate power  
TJ = TJ maximum, f = 50 Hz, d% = 50  
TJ = TJ maximum, tp 5 ms  
TJ = - 40 °C  
Maximum peak positive gate current  
Maximum peak positive gate voltage  
Maximum peak negative gate voltage  
+ VGM  
- VGM  
V
10  
180  
80  
40  
2.5  
1.6  
1
-
Maximum required gate  
DC gate current required to trigger  
DC gate voltage required to trigger  
IGT  
TJ = 25 °C  
TJ = 140 °C  
TJ = - 40 °C  
TJ = 25 °C  
TJ = 140 °C  
120  
mA  
V
trigger/current/voltage are the  
lowest value which will  
trigger all units 12 V  
-
-
VGT  
2
-
anode to cathode applied  
Maximumgatecurrent/voltage  
not to trigger is the maximum  
TJ = TJ maximum value which will not trigger any  
unit with rated VDRM  
DC gate current not to trigger  
DC gate voltage not to trigger  
IGD  
6.0  
mA  
V
VGD  
0.25  
anode to cathode applied  
THERMAL AND MECHANICAL SPECIFICATIONS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
- 40 to 140  
- 40 to 150  
0.27  
UNITS  
Maximum operating junction temperature range  
Maximum storage temperature range  
Maximum thermal resistance, junction to case  
Maximum thermal resistance, case to heatsink  
TJ  
°C  
TStg  
RthJC  
RthCS  
DC operation  
K/W  
Mounting surface, smooth, flat and greased  
0.1  
15.5  
(137)  
Non-lubricated threads  
N · m  
(lbf · in)  
Mounting torque, 10 %  
14  
(120)  
Lubricated threads  
Approximate weight  
Case style  
130  
g
See dimensions - link at the end of datasheet  
TO-209AC (TO-94)  
ΔRthJC CONDUCTION  
SINUSOIDAL  
CONDUCTION  
RECTANGULAR  
CONDUCTION  
CONDUCTION ANGLE  
TEST CONDITIONS  
UNITS  
180°  
120°  
90°  
0.043  
0.052  
0.066  
0.096  
0.167  
0.031  
0.053  
0.071  
0.101  
0.169  
TJ = TJ maximum  
K/W  
60°  
30°  
Note  
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC  
Document Number: 94379  
Revision: 11-Aug-08  
For technical questions, contact: ind-modules@vishay.com  
www.vishay.com  
3

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