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100324D

更新时间： 2024-01-08 10:18:22
品牌 Logo 应用领域
美国国家半导体 - NSC 转换器
页数 文件大小 规格书
6页 121K
描述
Low Power Hex TTL-to-ECL Translator

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100324D 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：QFF, QFL24,.4SQReach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.39.00.01
风险等级：5.03最大延迟：3.3 ns
接口集成电路类型：TTL TO ECL TRANSLATORJESD-30 代码：R-GQFP-F24
JESD-609代码：e0湿度敏感等级：1
位数：1功能数量：6
端子数量：24最高工作温度：125 °C
最低工作温度：-55 °C输出锁存器或寄存器：NONE
输出极性：INVERTED封装主体材料：CERAMIC, GLASS-SEALED
封装代码：QFF封装等效代码：QFL24,.4SQ
封装形状：RECTANGULAR封装形式：FLATPACK
峰值回流温度（摄氏度）：260电源：5,-4.5 V
认证状态：Not Qualified筛选级别：MIL-STD-883
座面最大高度：2.16 mm子类别：Level Translators
最大供电电压：5.5 V最小供电电压：4.5 V
标称供电电压：5 V表面贴装：YES
技术：ECL温度等级：MILITARY
端子面层：Tin/Lead (Sn63Pb37)端子形式：FLAT
端子节距：1.27 mm端子位置：QUAD
处于峰值回流温度下的最长时间：40Base Number Matches：1

100324D 数据手册

 浏览型号100324D的Datasheet PDF文件第1页浏览型号100324D的Datasheet PDF文件第2页浏览型号100324D的Datasheet PDF文件第4页浏览型号100324D的Datasheet PDF文件第5页浏览型号100324D的Datasheet PDF文件第6页 
Absolute Maximum Ratings (Note 1)  
ESD (Note 2)  
≥2000V  
If Military/Aerospace specified devices are required,  
please contact the National Semiconductor Sales Office/  
Distributors for availability and specifications.  
Recommended Operating  
Conditions  
Case Temperature (TC)  
Military  
Above which the useful life may be impaired.  
Storage Temperature (TSTG  
)
−65˚C to +150˚C  
−55˚C to +125˚C  
−5.7V to −4.2V  
Maximum Junction Temperature (TJ)  
Ceramic  
Supply Voltage (VEE  
)
+175˚C  
−7.0V to +0.5V  
−0.5V to +6.0V  
−0.5V to +6.0V  
−50 mA  
Note 1: Absolute maximum ratings are those values beyond which the de-  
vice may be damaged or have its useful life impaired. Functional operation  
under these conditions is not implied.  
VEE Pin Potential to Ground Pin  
VTTL Pin Potential to Ground Pin  
Input Voltage (DC)  
Note 2: ESD testing conforms to MIL-STD-883, Method 3015.  
Output Current (DC Output HIGH)  
Military Version  
DC Electrical Characteristics  
=
=
=
=
=
VEE −4.2V to −5.7V, VCC VCCA GND, TC −55˚C to +125˚C, VTTL +4.5V to +5.5V  
Symbol  
Parameter  
Output HIGH Voltage  
Min  
Max  
−870  
Units  
mV  
mV  
mV  
mV  
mV  
mV  
mV  
mV  
V
T
Conditions  
Notes  
C
=
V
−1025  
−1085  
−1830  
−1830  
−1035  
−1085  
0˚C to +125˚C  
−55˚C  
V
V
(Max)  
or V (Min)  
Loading with  
50Ω to −2.0V  
(Notes 3, 4, 5)  
OH  
IN  
IH  
IL  
−870  
V
V
V
Output LOW Voltage  
Output HIGH Voltage  
Output LOW Voltage  
−1620  
−1555  
0˚C to +125˚C  
−55˚C  
OL  
=
0˚C to +125˚C  
−55˚C  
V
V
IH  
IL  
(Max)  
or V (Min)  
Loading with  
50Ω to −2.0V  
(Notes 3, 4, 5)  
OHC  
OLC  
IN  
−1610  
−1555  
5.0  
0˚C to +125˚C  
−55˚C  
V
V
Input HIGH Voltage  
Input LOW Voltage  
Input HIGH Current  
Breakdown Test  
Input LOW Current  
Data  
2.0  
0.0  
−55˚C to +125˚C  
−55˚C to +125˚C  
−55˚C to +125˚C  
−55˚C to +125˚C  
Over V  
Over V  
, V , T Range  
TTL EE  
(Notes 3, 4, 5, 6)  
(Notes 3, 4, 5, 6)  
(Notes 3, 4, 5)  
IH  
IL  
C
0.8  
V
, V , T Range  
TTL EE  
C
=
=
I
20  
µA  
V
V
+2.7V  
+7.0V  
IH  
IN  
IN  
100  
µA  
I
IL  
=
−0.9  
−5.4  
mA  
−55˚C to +125˚C  
V
+0.4V  
(Notes 3, 4, 5)  
IN  
Enable  
=
IN  
V
Input Clamp Diode Voltage  
−1.2  
−22  
38  
V
−55˚C to +125˚C  
−55˚C to +125˚C  
−55˚C to +125˚C  
I
−18 mA  
(Notes 3, 4, 5)  
(Notes 3, 4, 5)  
(Notes 3, 4, 5)  
FCD  
=
=
I
V
V
Power Supply Current  
Power Supply Current  
−70  
mA  
mA  
All Inputs V  
All Inputs V  
+4.0V  
GND  
EE  
EE  
IN  
IN  
I
TTL  
TTL  
Note 3: F100K 300 Series cold temperature testing is performed by temperature soaking (to guarantee junction temperature equals −55˚C), then testing immediately  
without allowing for the junction temperature to stabilize due to heat dissipation after power-up. This provides “cold start” specs which can be considered a worst case  
condition at cold temperatures.  
Note 4: Screen tested 100% on each device at −55˚C, +25˚C, and +125˚C, Subgroups 1, 2, 3, 7, and 8.  
Note 5: Sample tested (Method 5005, Table I) on each manufactured lot at −55˚C, +25˚C, and +125˚C, Subgroups A1, 2, 3, 7, and 8.  
Note 6: Guaranteed by applying specified input condition and testing V /V  
.
OH OL  
AC Electrical Characteristics  
=
=
=
=
VEE −4.2V to −5.7V, VCC VCCA GND, VTTL +4.5V to +5.5V  
=
=
=
C
Symbol  
Parameter  
T
−55˚C  
Max  
T
+25˚C  
Max  
T
+125˚C  
Max  
Units  
ns  
Conditions  
Notes  
C
C
Min  
Min  
Min  
t
Propagation Delay  
0.50  
3.00  
0.50  
2.90  
0.30  
3.30  
(Notes 7, 8, 9)  
(Note 10)  
PLH  
PHL  
TLH  
THL  
t
t
t
Data and Enable to Output  
Transition Time  
Figures 1, 2  
0.35  
1.80  
0.45  
1.80  
0.45  
1.80  
ns  
20% to 80%, 80% to 20%  
Note 7: F100K 300 Series cold temperature testing is performed by temperature soaking (to guarantee junction temperature equals −55˚C), then testing immediately  
after power-up. This provides “cold start” specs which can be considered a worst case condition at cold temperatures.  
Note 8: Screen tested 100% on each device at +25˚C temperature only, Subgroup A9.  
Note 9: Sample tested (Method 5005, Table I) on each manufactured lot at +25˚C, Subgroup A9, and at +125˚C and −55˚C temperatures, Subgroups A10 and A11.  
Note 10: Not tested at +25˚C, +125˚C, and −55˚C temperature (design characterization data).  
3
www.national.com  
123456

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