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10-PY07HVA075S502-L985F18Y PDF预览

10-PY07HVA075S502-L985F18Y

更新时间: 2023-09-03 20:33:34
品牌 Logo 应用领域
VINCOTECH /
页数 文件大小 规格书
28页 9203K
描述
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage

10-PY07HVA075S502-L985F18Y 数据手册

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10-PY07HVA075S502-L985F18Y  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Conditions  
Value  
Unit  
Buck Switch  
VCES  
Collector-emitter voltage  
650  
59  
V
A
IC  
Collector current (DC current)  
Repetitive peak collector current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
ICRM  
tp limited by Tjmax  
Tj = Tjmax  
225  
86  
A
Ptot  
W
V
VGES  
Gate-emitter voltage  
±20  
175  
Tjmax  
Maximum junction temperature  
°C  
Buck Diode  
VRRM  
Peak repetitive reverse voltage  
650  
46  
V
A
IF  
Forward current (DC current)  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
IFRM  
tp limited by Tjmax  
Tj = Tjmax  
100  
63  
A
Ptot  
W
°C  
Tjmax  
Maximum junction temperature  
175  
Boost Switch  
VCES  
Collector-emitter voltage  
650  
59  
V
A
IC  
Collector current (DC current)  
Repetitive peak collector current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
ICRM  
tp limited by Tjmax  
Tj = Tjmax  
225  
86  
A
Ptot  
W
V
VGES  
Gate-emitter voltage  
±20  
175  
Tjmax  
Maximum junction temperature  
°C  
Copyright Vincotech  
2
28 May. 2021 / Revision 6  

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