Datasheet > 10-PC073AA030SM-PF04H06Y

10-PC073AA030SM-PF04H06Y

更新时间： 2023-09-03 20:28:57

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
33页	9061K
描述
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge

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10-PC073AA030SM-PF04H06Y

datasheet

Maximum Ratings

T_j= 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Value

Unit

Positive Boost Diode

V_RRM

Peak repetitive reverse voltage

600

I_F

Forward current (DC current)

Repetitive peak forward current

Surge (non-repetitive) forward current

Total power dissipation

T_j= T_jmax

T_s= 80 °C

I_FRM

I_FSM

P_tot

t_plimited by T_jmax

Single Half Sine Wave,

t_p= 10 ms

T_j= 25 °C

T_s= 80 °C

330

T_j= T_jmax

°C

T_jmax

Maximum junction temperature

175

Negative Neutral Point Diode

V_RRM

Peak repetitive reverse voltage

Forward current (DC current)

Surge (non-repetitive) forward current

Surge current capability

1600

I_F

T_j= T_jmax

T_s= 80 °C

T_j= 150 °C

T_s= 80 °C

I_FSM

I²t

200

Single Half Sine Wave,

t_p= 10 ms

A²s

°C

P_tot

Total power dissipation

T_j= T_jmax

T_jmax

Maximum junction temperature

150

Positive Neutral Point Diode

V_RRM

Peak repetitive reverse voltage

Forward current (DC current)

Surge (non-repetitive) forward current

Surge current capability

1600

I_F

T_j= T_jmax

T_s= 80 °C

T_j= 150 °C

T_s= 80 °C

I_FSM

I²t

200

Single Half Sine Wave,

t_p= 10 ms

A²s

°C

P_tot

Total power dissipation

T_j= T_jmax

T_jmax

Maximum junction temperature

150

11 Jul. 2022 / Revision 1

1 234 5 6 7...33

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