Datasheet > 10-FZ07B2A030SM08-M575L408

10-FZ07B2A030SM08-M575L408

更新时间： 2023-09-03 20:37:27

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
20页	6708K
描述
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge

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10-FZ07B2A030SM08-M575L408

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Boost Diode

Static

1,49

1,75

1,87

1,8⁽¹⁾

102

V_F

I_R

Forward voltage

125

150

Reverse leakage current

Thermal

V_r= 650 V

µA

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

Dynamic

1,54

K/W

9,5

9,2

I_RM

Peak recovery current

125

150

9,07

8,4

t_rr

Reverse recovery time

125

150

8,68

8,8

0,051

0,049

0,05

9,153x10^-3

8,946x10^-3

9,178x10^-3

di/dt=3122 A/µs

di/dt=2852 A/µs

di/dt=2764 A/µs

Q_r

Recovered charge

0/15

400

125

150

μC

E_rec

Reverse recovered energy

Peak rate of fall of recovery current

125

150

mWs

A/µs

2953

2573

2532

(di_rf/dt)_max

125

150

13 Jul. 2022 / Revision 2

1 2 3 456 7 8...20

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