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10-FZ07B2A030SM08-M575L408 PDF预览

10-FZ07B2A030SM08-M575L408

更新时间: 2023-09-03 20:37:27
品牌 Logo 应用领域
VINCOTECH /
页数 文件大小 规格书
20页 6708K
描述
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge

10-FZ07B2A030SM08-M575L408 数据手册

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10-FZ07B2A030SM08-M575L408  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Boost Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
VCE = VGE  
0,0003  
30  
25  
3,3  
4
4,7  
V
V
25  
1,67  
1,8  
2,22(1)  
VCEsat  
Collector-emitter saturation voltage  
15  
125  
150  
1,84  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
650  
0
25  
25  
40  
µA  
nA  
Ω
20  
120  
None  
1800  
45  
Cies  
Coes  
Cres  
Qg  
pF  
pF  
pF  
nC  
Output capacitance  
f = 1 Mhz  
0
25  
25  
25  
Reverse transfer capacitance  
Gate charge  
7
VCC = 520 V  
15  
30  
70  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
1,57  
K/W  
25  
21,12  
20,48  
20,16  
9,28  
td(on)  
Turn-on delay time  
Rise time  
125  
150  
25  
ns  
ns  
tr  
125  
150  
25  
10,24  
10,56  
134,4  
151,68  
156,8  
4,96  
Rgon = 16 Ω  
Rgoff = 16 Ω  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
ns  
0/15  
400  
30  
tf  
125  
150  
25  
10,39  
12,31  
0,335  
0,34  
ns  
QrFWD=0,051 µC  
QrFWD=0,049 µC  
QrFWD=0,05 µC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
125  
150  
25  
mWs  
mWs  
0,347  
0,148  
0,262  
0,292  
Eoff  
125  
150  
Copyright Vincotech  
4
13 Jul. 2022 / Revision 2  

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