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10-FZ07B2A030SM08-M575L408 PDF预览

10-FZ07B2A030SM08-M575L408

更新时间： 2023-09-03 20:37:27
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VINCOTECH /
页数 文件大小 规格书
20页 6708K
描述
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge

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10-FZ07B2A030SM08-M575L408 数据手册

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10-FZ07B2A030SM08-M575L408  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Conditions  
Value  
Unit  
Boost Switch  
VCES  
Collector-emitter voltage  
650  
32  
V
A
IC  
Collector current (DC current)  
Repetitive peak collector current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
ICRM  
tp limited by Tjmax  
Tj = Tjmax  
90  
A
Ptot  
60  
W
V
VGES  
Gate-emitter voltage  
±20  
175  
Tjmax  
Maximum junction temperature  
°C  
Boost Diode  
VRRM  
Peak repetitive reverse voltage  
650  
24  
V
A
IF  
Forward current (DC current)  
Repetitive peak forward current  
Surge (non-repetitive) forward current  
Surge current capability  
Tj = Tjmax  
Ts = 80 °C  
IFRM  
IFSM  
I2t  
tp limited by Tjmax  
75  
A
142  
100  
62  
A
Single Half Sine Wave,  
tp = 10 ms  
Tj = 25 °C  
Ts = 80 °C  
A2s  
W
°C  
Ptot  
Total power dissipation  
Tj = Tjmax  
Tjmax  
Maximum junction temperature  
175  
Boost Sw. Protection Diode  
VRRM  
Peak repetitive reverse voltage  
Forward current (DC current)  
Surge (non-repetitive) forward current  
Surge current capability  
1600  
38  
V
A
IF  
IFSM  
I2t  
Tj = Tjmax  
Ts = 80 °C  
Tj = 150 °C  
Ts = 80 °C  
200  
200  
46  
A
Single Half Sine Wave,  
tp = 10 ms  
A2s  
W
°C  
Ptot  
Total power dissipation  
Tj = Tjmax  
Tjmax  
Maximum junction temperature  
150  
Copyright Vincotech  
2
13 Jul. 2022 / Revision 2  
1234567...20

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