Datasheet > 10-FZ062PA100SA-P994F08

10-FZ062PA100SA-P994F08

更新时间： 2024-02-25 13:18:39

品牌	Logo	应用领域
VINCOTECH		栅
页数	文件大小	规格书
15页	373K
描述
Insulated Gate Bipolar Transistor

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技术参数
数据手册

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10-FZ062PA100SA-P994F08 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.73	Is Samacsys：	N
Base Number Matches：	1

10-FZ062PA100SA-P994F08 数据手册

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FZ06 / F0062PA100SA

preliminary datasheet

Output Inverter

Figure 9

Output inverter IGBT

Figure 10

Output inverter IGBT

Typical switching times as a

function of collector current

t = f(I_C)

Typical switching times as a

function of gate resistor

t = f(R_G)

t_don

t_f

t_doff

t_don

t_f

0,1

t_r

0,01

t_r

0,001

(A)

_C180

R _G( Ω )

100

120

140

160

200

With an inductive load at

T_j=

V_CE

V_GE

T_j=

V_CE

V_GE

I_C=

150

300

±15

°C

150

300

±15

100

°C

R_gon

R_goff

Ω

Figure 11

Output inverter FRED

Figure 12

Output inverter FRED

Typical reverse recovery time as a

function of collector current

Typical reverse recovery time as a

function of IGBT turn on gate resistor

t_rr= f(I_C)

t_rr= f(R_gon)

0,2

0,4

0,16

0,12

0,08

0,04

t_rr

0,3

0,2

0,1

T_j= T_jmax-25°C

t_rr

T_j= 25°C

t_rr

(A)

_C180

R _{g on}( Ω )

100

120

140

160

200

T_j=

V_CE

V_GE

T_j=

V_R=

I_F=

25/150

300

±15

°C

25/150

300

°C

100

R_gon

V_GE=

Ω

±15

Revision: 1

1...3 4 567 8 9...15

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