Datasheet > 10-F0062PA100SA-P994F09

10-F0062PA100SA-P994F09

更新时间： 2024-01-22 08:54:28

品牌	Logo	应用领域
VINCOTECH		栅
页数	文件大小	规格书
15页	373K
描述
Insulated Gate Bipolar Transistor

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技术参数
数据手册

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10-F0062PA100SA-P994F09 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.73	Is Samacsys：	N
Base Number Matches：	1

10-F0062PA100SA-P994F09 数据手册

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FZ06 / F0062PA100SA

preliminary datasheet

Output Inverter

Figure 1

Output inverter IGBT

Figure 2

Output inverter IGBT

Typical output characteristics

_C= f(V_CE

)

I_C= f(V_CE)

300

250

200

150

100

300

250

200

150

100

_CE(V)

V_CE(V)

t_p=

T_j=

t_p=

350

μs

350

150

μs

T_j=

°C

V_GEfrom

7 V to 17 V in steps of 1 V

Figure 3

Typical transfer characteristics

Output inverter IGBT

Figure 4

Output inverter FRED

Typical diode forward current as

a function of forward voltage

I_F= f(V_F)

I_C= f(V_GE

)

100

300

250

200

150

100

T_j= T_jmax-25°C

T_j= 25°C

T_j= T_jmax-25°C

T_j= 25°C

V_GE(V)

V_F(V)

0,5

1,5

2,5

t_p=

350

μs

350

μs

V_CE

Revision: 1

1 2 345 6 7...15

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