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10-E106PMA020SA-L925A38Z PDF预览

10-E106PMA020SA-L925A38Z

更新时间: 2024-04-09 19:00:32
品牌 Logo 应用领域
VINCOTECH 双极性晶体管
页数 文件大小 规格书
29页 9563K
描述
IGBT3 Easy paralleling Low turn-off losses Low collector emitter saturation voltage Positive temperature coefficient Short tail current

10-E106PMA020SA-L925A38Z 数据手册

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10-E106PMA020SA-L925A38Z  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Brake Switch  
Static  
VGE(th)  
VCEsat  
ICES  
IGES  
rg  
Gate-emitter threshold voltage  
Collector-emitter saturation voltage  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
VCE = VGE  
0,00029 25  
5
5,8  
6,5  
V
25  
20  
1,1  
1,55  
1,75  
1,9(2)  
15  
0
V
125  
600  
0
25  
25  
1,1  
µA  
nA  
Ω
20  
300  
None  
1100  
71  
Cies  
Coes  
Cres  
Qg  
pF  
pF  
pF  
nC  
Output capacitance  
f = 1 Mhz  
0
25  
25  
25  
Reverse transfer capacitance  
Gate charge  
32  
VCC = 480 V  
0/15  
20  
120  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Thermal resistance junction to sink(3)  
Dynamic  
1,44  
K/W  
Rth(j-s)  
25  
15,8  
15,2  
td(on)  
Turn-on delay time  
Rise time  
125  
150  
25  
ns  
ns  
15,6  
12,2  
tr  
125  
150  
25  
14  
14,8  
Rgon = 8 Ω  
Rgoff = 8 Ω  
153,8  
169  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
ns  
173,6  
68,05  
79,29  
89,65  
0,358  
0,555  
0,595  
0,494  
0,708  
0,749  
0/15  
400  
20  
tf  
125  
150  
25  
ns  
QrFWD=0,699 µC  
QrFWD=1,37 µC  
QrFWD=1,52 µC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
125  
150  
25  
mWs  
mWs  
Eoff  
125  
150  
Copyright Vincotech  
6
19 Dec. 2023 / Revision 1  

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