1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303
Vishay Semiconductors
Thermal Characteristics
(TA = 25 °C unless otherwise noted)
Parameter
Symbol
RθJL
Limit
20
Unit
Typical thermal resistance junction-to-lead
°C/W
Typical thermal resistance junction-to-ambient
RθJA
75
°C/W
Application
• This series of Silicon Transient Suppressors is
used in applications where large voltage tran-
sients can permanently damage voltage-sensitive
components.
• This Transient Voltage Suppressor diode has a
pulse power rating of 1500 watts for one millisec-
ond. The response time of TVS diode clamping
-9
action is effectively instantaneous (1 x 10 sec-
onds bidirectional); therefore, they can protect
integrated circuits, MOS devices, hybrids, and
other voltage sensitive semiconductors and com-
ponents. TVS diodes can also be used in series or
parallel to increase the peak power ratings.
• The TVS diode can be used in applications where
induced lightning on rural or remote transmission
lines presents a hazard to electronic circuitry (ref:
R.E.A. specification P.E. 60).
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise specified)
100
10
1
150
TJ = 25 °C
tr = 10 µsec.
Pulse Width (td)
is defined as the point
where the peak current
decays to 50 % of IPPM
Peak Value
IPPM
100
50
0
Half Value — IPP
IPPM
2
10/1000 µsec. Waveform
as defined by R.E.A.
td
0.1
0.1µs
1.0µs
10µs
100µs
1.0ms
10ms
1.0
3.0
4.0
0
2.0
t — Time (ms)
td — Pulse Width (sec.)
Figure 1. Peak Pulse Power Rating Curve
Figure 3. Pulse Waveform
10000
100
Unidirectional
Bidirectional
V
R
= 0
75
50
1000
V
= Rated
R
100
10
Stand-off Voltage
25
0
f = 1 MHz
Vsig = 50 m Vp-p
= 25°C
T
J
5
10
100
V(BR), Breakdown Voltage (V)
500
0
25
50
75
100
125
150
175 200
TA — Ambient Temperature (°C)
Figure 2. Pulse Derating Curve
Figure 4. Typical Junction Capacitance
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Document Number 88301
03-Mar-05