Datasheet > 08F1917

08F1917

更新时间： 2022-01-19 04:50:00

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
8页	188K
描述
TRANSISTOR MOSFET TO-247

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数据手册

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08F1917 数据手册

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(BR)DSS

= 0 Vdc, I = 250 µAdc)

400

—

420

—

Vdc

mV/°C

Temperature Coefficient (Positive)

Zero Gate Voltage Drain Current

mAdc

DSS

= 400 Vdc, V

= 320 Vdc, V

= 0 Vdc)

= 0 Vdc, T = 125°C)

—

0.25

1.0

Gate–Body Leakage Current (V

= ± 20 Vdc, V

= 0)

—

100

nAdc

Vdc

GSS

ON CHARACTERISTICS (1)

Gate Threshold Voltage

GS(th)

= V , I = 0.25 mAdc)

2.0

—

3.0

7.0

4.0

—

Temperature Coefficient (Negative)

mV/°C

Ohm

Vdc

Static Drain–Source On–Resistance (V

= 10 Vdc, I = 8.0 Adc)

—

0.225

0.24

DS(on)

Drain–Source On–Voltage (V

= 10 Vdc)

DS(on)

(I = 16 Adc)

—

4.8

4.3

(I = 8.0 Adc, T = 125°C)

Forward Transconductance (V

= 15 Vdc, I = 8.0 Adc)

8.0

—

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

—

2570

330

3600

460

iss

= 25 Vdc, V

= 0 Vdc,

f = 1.0 MHz)

Output Capacitance

oss

Reverse Transfer Capacitance

164

rss

SWITCHING CHARACTERISTICS (2)

Turn–On Delay Time

—

d(on)

= 200 Vdc, I = 16 Adc,

Rise Time

= 10 Vdc,

= 9.1 Ω)

Turn–Off Delay Time

Fall Time

170

d(off)

Gate Charge

(See Figure 8)

= 320 Vdc, I = 16 Adc,

—

= 10 Vdc)

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage (1)

Vdc

(I = 16 Adc, V

= 0 Vdc)

= 0 Vdc, T = 125°C)

—

1.0

0.9

1.6

—

(I = 16 Adc, V

Reverse Recovery Time

(See Figure 9)

—

340

228

112

4.3

—

(I = 16 Adc, V

= 0 Vdc,

dI /dt = 100 A/µs)

Reverse Recovery Stored Charge

µC

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25″ from package to center of die)

—

5.0

—

Internal Source Inductance

(Measured from the source lead 0.25″ from package to source bond pad)

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

Motorola TMOS Power MOSFET Transistor Device Data

123 4 5 6 7 8

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