Datasheet > 08051J0R5BBS

08051J0R5BBS

更新时间： 2022-05-14 22:22:25

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
25页	1134K
描述
Gallium Arsenide pHEMT RF Power Field Effect Transistor

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08051J0R5BBS 数据手册

Z = 25 

load

f = 3550 MHz

source

f = 3550 MHz

= 12 Vdc, I = 130 mA, P = 1 W Avg.

DQ out

load

source

MHz



3550

4.0 -- j22.6

4.5 -- j15.3

Test circuit impedance as measured from

gate to ground.

source

Test circuit impedance as measured

from drain to ground.

load

Output

Matching

Network

Device

Under

Test

Input

Matching

Network

source

load

Figure 7. Series Equivalent Source and Load Impedance — 3550 MHz

MRFG35010ANT1

RF Device Data

Freescale Semiconductor, Inc.

1...4 5 678 9 10...25

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