Datasheet > 0783_XP161A11A1PR

0783_XP161A11A1PR

更新时间： 2022-11-25 12:25:12

品牌	Logo	应用领域
特瑞仕 - TOREX		/
页数	文件大小	规格书
4页	135K
描述
Power MOS FET

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0783_XP161A11A1PR 数据手册

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11S_38XP161A11A1PR 02.9.12 4:13 PM ページ 839

XP161A11A1PR

■Electrical Characteristics

DC Characteristics

Ta=25

PARAMETER

SYMBOL

Idss

CONDITIONS

MIN

1.0

TYP

MAX

UNITS

Drain Cut-off Current

Vds=30V, Vgs=0V

µA

Gate-Source Leakage Current

Gate-Source Cut-off Voltage

Igss

Vgs= 20V, Vds=0V

Id=1mA, Vds=10V

Id=2A, Vgs=10V

Id=2A, Vgs=4.5V

2.5

µA

Vgs(off)

Ω

0.05

0.065

0.105

Drain-Source On-state

Resistance (note)

Rds(on)

0.075

Forward Transfer Admittance

(note)

Yfs

5.5

Id=2A, Vds=10V

If=4A, Vgs=0V

Body Drain Diode

Forward Voltage

0.85

1.1

Note: Effective during pulse test.

Dynamic Characteristics

Ta=25

PARAMETER

Input Capacitance

Output Capacitance

Feedback Capacitance

SYMBOL

Ciss

CONDITIONS

MIN

TYP

270

150

MAX

UNITS

Vds=10V, Vgs=0V

f=1MHz

Coss

Crss

Switching Characteristics

Ta=25

PARAMETER

Turn-on Delay Time

Rise Time

SYMBOL

td (on)

CONDITIONS

MIN

TYP

MAX

UNITS

Vgs=5V, Id=2A

Vdd=10V

Turn-off Delay Time

Fall Time

td (off)

Thermal Characteristics

PARAMETER

SYMBOL

Rth (ch-a)

CONDITIONS

MIN

TYP

62.5

MAX

UNITS

Thermal Resistance

(channel-ambience)

Implement on a ceramic PCB

839

123 4

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