Datasheet > 05NM65-V

05NM65-V

更新时间： 2023-12-06 20:10:41

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
7页	448K
描述
N-CH

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05NM65-V 数据手册

05NM65-V

Power MOSFET



ABSOLUTE MAXIMUM RATINGS (T_C=25°С, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

V_GSS

I_D

RATINGS

650

UNIT

Drain-Source Voltage

Gate-Source Voltage

±30

Continuous

0.5

Drain Current

Pulsed (Note 2)

I_DM

1.5

Power Dissipation

P_D

°C

Junction Temperature

T_J

+150

-55 ~ +150

Storage Temperature Range

T_STG

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature.



THERMAL DATA

PARAMETER

SYMBOL

θ_JA

RATINGS

110

UNIT

°С/W

Junction to Ambient

Junction to Case

θ_JC

4.46



ELECTRICAL CHARACTERISTICS (T_J=25°С, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

BV_DSS

I_DSS

I_D=250µA, V_GS=0V

650

10 µA

+100 nA

-100 nA

V_DS=650V, V_GS=0V

V_GS=+30V, V_DS=0V

Forward

Reverse

Gate-Source Leakage Current

I_GSS

V_GS=-30V, V_DS=0V

ON CHARACTERISTICS

Gate Threshold Voltage

V_GS(TH)

R_DS(ON)

V_DS=V_GS, I_D=250µA

V_GS=10V, I_D=0.25A

1.0

3.0

Static Drain-Source On-State Resistance

DYNAMIC PARAMETERS

Input Capacitance

Ω

C_ISS

C_OSS

C_RSS

V_GS=0V, V_DS=25V, f=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

SWITCHING PARAMETERS

Total Gate Charge (Note 1)

Gate to Source Charge

Gate to Drain Charge

Q_G

Q_GS

Q_GD

t_D(ON)

t_R

5.6

1.4

3.4

4.3

V_DS=100V, V_GS=10V, I_D=0.5A,

I_D=1mA (Note 1, 2)

Turn-ON Delay Time (Note 1)

Rise Time

V_DS=100V, V_GS=10V, I_D=0.5A,

R_G=25ꢀ (Note 1, 2)

Turn-OFF Delay Time

Fall-Time

t_D(OFF)

t_F

72.8

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

Maximum Body-Diode Pulsed Current

Drain-Source Diode Forward Voltage (Note 1)

Reverse Recovery Time (Note 1)

I_S

I_SM

V_SD

t_rr

0.5

1.5

1.4

I_S=0.5A, V_GS=0V

V_GS=0V, I_S=1.0A,

dI_F/dt=100A/µs (Note1)

260

µC

Reverse Recovery Charge

Q_rr

1420

Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%.

2. Essentially independent of operating temperature.

UNISONIC TECHNOLOGIES CO., LTD

2 of 7

QW-R205-466.A

www.unisonic.com.tw

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