Datasheet > ZXTN25100DGQ

ZXTN25100DGQ

更新时间： 2023-12-06 19:52:45

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	506K
描述
NPN, 100V, 3A, SOT223

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ZXTN25100DGQ 数据手册

A Product Line of

Diodes Incorporated

ZXTN25100DG

Absolute Maximum Ratings (@T_A= +25°C, unless otherwise specified.)

Characteristic

Symbol

V_CBO

V_CEX

V_CEO

V_ECO

V_EBO

I_C

Value

180

100

Unit

Collector-Base Voltage

Collector-Emitter Voltage (forward blocking)

Collector-Emitter Voltage

Emitter-Collector Voltage (reverse blocking)

Emitter-Base Voltage

Continuous Collector Current

Base Current

I_B

Peak Pulse Current

3.5

I_CM

Thermal Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

1.2

9.6

1.6

12.8

5.3

Unit

(Note 6)

(Note 7)

(Note 8)

(Note 9)

Power Dissipation

Linear Derating Factor

mW/°C

P_D

(Note 6)

(Note 7)

(Note 8)

(Note 9)

(Note 10)

104

23.5

Thermal Resistance, Junction to Ambient

R_θJA

°C/W

°C

Thermal Resistance, Junction to Lead

R_θJL

Operating and Storage Temperature Range

-55 to +150

T_J,T_STG

ESD Ratings (Note 11)

Characteristic

Electrostatic Discharge - Human Body Model

Electrostatic Discharge - Machine Model

Symbol

ESD HBM

ESD MM

Value

4,000

400

Unit

JEDEC Class

Notes:

6. For a device mounted with the collector lead on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air

conditions whilst operating in steady-state.

7. Same as Note 6, except the device is mounted on 25mm x 25mm 1oz copper.

8. Same as Note 6, except the device is mounted on 50mm x 50mm 2oz copper.

9. Same as Note 8 measured at t<5 seconds.

10. Thermal resistance from junction to solder-point (at the end of the collector lead).

11. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

2 of 7

www.diodes.com

May 2015

ZXTN25100DG

Document Number DS33705 Rev. 3 - 2

123 4 5 6 7

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